Investigating the impact of gamma radiation on structural and optical properties of Eu3+ doped rare-earth hafnate pyrochlore nanocrystals

2019 ◽  
Vol 207 ◽  
pp. 1-13 ◽  
Author(s):  
Victoria Trummel ◽  
Santosh K. Gupta ◽  
Madhab Pokhrel ◽  
Donald Wall ◽  
Yuanbing Mao
Keyword(s):  
Optical Properties ◽  
Rare Earth ◽  
Gamma Radiation ◽  
Structural And Optical Properties ◽  
The Impact

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

2005 ◽  
Vol 892 ◽  
Author(s):  
Katharina Lorenz ◽  
E. Nogales ◽  
R. Nédélec ◽  
J. Penner ◽  
R. Vianden ◽  
...  
Keyword(s):  
Optical Properties ◽  
Rare Earth ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Strong Increase ◽  
Structural And Optical Properties ◽  
Nitrogen Gas ◽  
Higher Temperature ◽  
The Eu ◽  
The Rare Earth

AbstractGaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 °C in vacuum, in flowing nitrogen gas or a mixture of NH3 and N2. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N2 already show the first signs of surface dissociation at 1000 °C. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH3 + N2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 °C in NH3+N2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Structural And Optical Properties ◽  
Indium Composition ◽  
Cap Layer ◽  
Self Assembled ◽  
The Impact

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

Influence of Gamma Radiation on Structural and Optical Properties of Fe2O3 Thin Films Prepared by Chemical Spray Technique

2016 ◽  
Vol 63 ◽  
pp. 22-28 ◽  
Author(s):  
Mahdi M. Mutter ◽  
Habiba Kadhum Atty ◽  
Areej Adnan Hateef
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Gamma Radiation ◽  
Energy Gap ◽  
Transmission Spectra ◽  
Structural And Optical Properties ◽  
Xrd Pattern ◽  
Chemical Spray ◽  
Spray Technique

The purpose of this research is studying the effect of gamma radiation on the structural and optical properties of iron oxide Fe2O3thin films. The technique used for prepared the thin films was thermal chemical spray. The effect of Co60irradiation on the structural and optical properties of the thin films was investigated. The crystal structure were studied by XRD pattern. The surface tested from crack and defect was looke by used microscope image. The absorption and transmission spectra by used UV/VIS for the as deposited and irradiated thin films. The energy gap and absorption coefficient were studied. It's found that the energy gap for the un-irradiated sample was 2.3 eV and than after exposed to gamma radiation at (25,50,75,100 and 125) Gy the energy gap decreased and above 5o Gy was increasing. The absorption coefficient increased until (12x104) cm-1at 50 Gy and than was decreasing to (2x104) cm-1at 125 Gy. The effect of radiation on the structural and optical properties was positive at the levels of irradiation used.

Ion Beam Induced Modifications in Conducting Polymers

2013 ◽  
Vol 341 ◽  
pp. 69-105
Author(s):  
R.C. Ramola ◽  
Subhash Chandra
Keyword(s):  
Optical Properties ◽  
Conducting Polymers ◽  
Radiation Effects ◽  
Ion Beam ◽  
Polymeric Materials ◽  
High Energy ◽  
Ion Beams ◽  
Magnetic Storage ◽  
Structural And Optical Properties ◽  
The Impact

High energy ion beam induced modifications in polymeric materials is of great interest from the point of view of characterization and development of various structures and filters. Due to potential use of conducting polymers in light weight rechargeable batteries, magnetic storage media, optical computers, molecular electronics, biological and thermal sensors, the impact of swift heavy ions for the changes in electrical, structural and optical properties of polymers is desirable. The high energy ion beam irradiation of polymer is a sensitive technique to enhance its electrical conductivity, structural, mechanical and optical properties. Recent progress in the radiation effects of ion beams on conducting polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on conductive polymers is described. The electrical, structural and optical properties of irradiated films were analyzed using V-I, X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV-Visible spectroscopy and Fourier transform infrared spectroscopy methods.

scholarly journals Influence of Gd Doping on the Structural and Optical Properties of ZnO

2015 ◽  
Vol 773-774 ◽  
pp. 672-676 ◽  
Author(s):  
Nurul Fadzilah Ab Rasid ◽  
Siti Nooraya Mohd Tawil ◽  
Che Ani Norhidayah ◽  
Mohd Zainizan Sahdan
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Rare Earth ◽  
Metal Ion ◽  
Earth Metal ◽  
Rare Earth Ions ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Zinc Oxide Films ◽  
Atomic Force

Doping transition metal or rare-earth metal ion are one of the most popular topics in semiconductors. In this work, gadolinium (Gd) doped zinc oxide thin films was prepared using spin-coating technique with different concentrations in atomic percent (at.%). The influences of rare-earth ions doped into the zinc oxide films were studies. The effects on the physical and optical properties of the films were investigated by field emission scanning electron microscope, x-ray diffraction, atomic force microscopic and ultraviolet-visible spectrophotometer. It was found that the properties of zinc oxide can be tuned by changing the concentration physical and optical of Gd.

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