Broad and nearly white photoluminescence induced by the nitrogen incorporation in Si/SiOxNy multilayers

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Nitrogen incorporation effects in Fe(001) thin films

Journal of Applied Physics ◽

10.1063/1.1368398 ◽

2001 ◽

Vol 89 (11) ◽

pp. 6314-6319 ◽

Cited By ~ 7

Author(s):

J. L. Menéndez ◽

G. Armelles ◽

A. Cebollada ◽

F. Briones ◽

F. Peiró ◽

...

Keyword(s):

Thin Films ◽

Nitrogen Incorporation

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The effect of nitrate feeding levels on the pathway of nitrogen incorporation into photosynthesizing leaf metabolism ofDatura stramonium L

Plant and Soil ◽

10.1007/bf02183286 ◽

1978 ◽

Vol 49 (3) ◽

pp. 625-631 ◽

Cited By ~ 5

Author(s):

O. A. M. Lewis ◽

T. A. Probyn

Keyword(s):

Nitrogen Incorporation ◽

Leaf Metabolism

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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.465 ◽

2016 ◽

Vol 858 ◽

pp. 465-468 ◽

Cited By ~ 1

Author(s):

D.P. Ettisserry ◽

Neil Goldsman ◽

Akin Akturk ◽

Aivars J. Lelis

Keyword(s):

Nitric Oxide ◽

Silicon Dioxide ◽

First Principles ◽

Density Functional ◽

Oxygen Vacancies ◽

Functional Theory ◽

Power Mosfets ◽

Voltage Instability ◽

Nitrogen Incorporation ◽

Effective Mobility

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

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