Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

2019 ◽  
Vol 775 ◽  
pp. 1301-1306 ◽  
Author(s):  
Xiaodi Wei ◽  
Hong Huang ◽  
Cong Ye ◽  
Wei Wei ◽  
Hao Zhou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Device Performance ◽  
Nitrogen Incorporation

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Role of oxygen vacancies for resistive switching in noble metal sandwiched Pr0.67Ca0.33MnO3-δ

2017 ◽  
Vol 110 (24) ◽  
pp. 243502 ◽  
Author(s):  
Thilo Kramer ◽  
Malte Scherff ◽  
Daniel Mierwaldt ◽  
Joerg Hoffmann ◽  
Christian Jooss
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Oxygen Vacancies

scholarly journals The role of oxygen vacancies on resistive switching properties of oxide materials

2020 ◽  
Vol 7 (5) ◽  
pp. 665-683
Author(s):  
Hang Meng ◽  
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Shihao Huang ◽  
Yifeng Jiang
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Oxide Materials

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

scholarly journals The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory

InfoMat ◽  
2020 ◽  
Vol 2 (5) ◽  
pp. 960-967 ◽  
Author(s):  
Mengting Zhao ◽  
Xiaobing Yan ◽  
Long Ren ◽  
Mengliu Zhao ◽  
Fei Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Quantum Conductance ◽  
Resistive Switching Memory ◽  
Switching Memory

Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 ◽  
Vol 7 (7) ◽  
pp. 074202 ◽  
Author(s):  
Moon Young Yang ◽  
Katsumasa Kamiya ◽  
Hiroki Shirakawa ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nitrogen Incorporation

Bis(trialkylsilyl oxide) Silicon Phthalocyanines: Understanding the Role of Solubility in Device Performance as Ternary Additives in Organic Photovoltaics

Langmuir ◽  
2020 ◽  
Vol 36 (10) ◽  
pp. 2612-2621 ◽  
Author(s):  
Mário C. Vebber ◽  
Trevor M. Grant ◽  
Jaclyn L. Brusso ◽  
Benoît H. Lessard
Keyword(s):  
Organic Photovoltaics ◽  
Device Performance ◽  
Silicon Phthalocyanines

Role of Nitrogen Incorporation into Hf-Based High-kGate Dielectrics for Termination of Local Current Leakage Paths

2005 ◽  
Vol 44 (No. 43) ◽  
pp. L1333-L1336 ◽  
Author(s):  
Heiji Watanabe ◽  
Satoshi Kamiyama ◽  
Naoto Umezawa ◽  
Kenji Shiraishi ◽  
Shiniti Yoshida ◽  
...  
Keyword(s):  
Current Leakage ◽  
Nitrogen Incorporation ◽  
Local Current
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