Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

Download Full-text

Anisotropic vacancy-mediated phonon mode softening in Sm and Gd doped ceria

Physical Chemistry Chemical Physics ◽

10.1039/c8cp00559a ◽

2018 ◽

Vol 20 (15) ◽

pp. 10048-10059 ◽

Cited By ~ 6

Author(s):

Dong-Hyuk Jung ◽

Ji-Hwan Lee ◽

Mehmet Emin Kilic ◽

Aloysius Soon

Keyword(s):

First Principles ◽

Density Functional ◽

Oxygen Vacancies ◽

Phonon Mode ◽

Density Functional Theory Calculations ◽

Functional Theory ◽

Mode Softening ◽

Dynamics Simulations ◽

And Diffusion ◽

Diffusion Properties

The structural, vibrational, and diffusion properties of different ceria-based systems (including oxygen vacancies and rare-earth dopants (Sm or Gd)) have been examined using both first-principles density-functional theory calculations and finite-temperature molecular dynamics simulations.

Download Full-text

First-Principles Calculations of Structural Changes Induced by Oxygen Vacancies in Tetragonal Phase BaTiO3

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.485.19 ◽

2011 ◽

Vol 485 ◽

pp. 19-22

Author(s):

Yoshiki Iwazaki ◽

Tatsuo Sakashita ◽

Toshimasa Suzuki ◽

Youichi Mizuno ◽

Shinji Tsuneyuki

Keyword(s):

Phase Transition ◽

Density Functional Theory ◽

First Principles ◽

Tetragonal Phase ◽

Density Functional ◽

Oxygen Vacancies ◽

Structural Changes ◽

Cubic Phase ◽

First Principles Calculations ◽

Functional Theory

Structural changes induced by oxygen vacancies in tetragonal phase BaTiO3are studied with first principles calculations within density functional theory. In our calculations, the incorporation of oxygen vacancies greatly decreases c/a ratio of the tetragonal phase BaTiO3, and a phase transition from tetragonal to cubic phase occurs when the incorporation of the oxygen vacancies reaches about 4%. Our results also shows that the generation of the oxygen vacancies slightly increases the volume of BaTiO3, and the increases are typically less than 0.5% even in heavily reduced conditions.

Download Full-text

Oxygen Vacancies in Amorphous HfO2 and SiO2

MRS Proceedings ◽

10.1557/proc-1073-h01-01 ◽

2008 ◽

Vol 1073 ◽

Cited By ~ 2

Author(s):

Chioko Kaneta ◽

Takahiro Yamasaki

Keyword(s):

First Principles ◽

Density Functional ◽

Formation Energy ◽

Oxygen Vacancies ◽

Gate Dielectrics ◽

Propagation Mechanism ◽

Functional Theory ◽

The Density Functional Theory ◽

The Difference ◽

Formation Energies

ABSTRACTFormation energies and electronic properties of oxygen vacancies in amorphous HfO2 gate dielectrics are investigated by employing the first-principles method based on the density functional theory. We have found that the formation energy of neutral oxygen vacancy in amorphous HfO2 distributes from 4.7 to 6.1 eV, most of which is lower than the value for cubic HfO2, 6.0 eV. We also investigated the stabilities of the Vo pairs in various charged state and compared with those in amorphous SiO2. We found that Vo++ is stabilized in the vicinity of Vo in SiO2. In HfO2, however, this does not happen. This suggests the difference of defect propagation mechanism in HfO2 and SiO2.

Download Full-text

REACTIVITY AND STABILITY OF OXYGEN VACANCIES ON TiO2 ANATASE (101) SURFACE: FIRST-PRINCIPLES CALCULATIONS

International Journal of Modern Physics B ◽

10.1142/s0217979211100886 ◽

2011 ◽

Vol 25 (29) ◽

pp. 4029-4037

Author(s):

QILI CHEN ◽

CHAOQUN TANG ◽

BO LI ◽

GUANG ZHENG ◽

KAIHUA HE

Keyword(s):

First Principles ◽

Density Functional ◽

Oxygen Vacancies ◽

Atomic Displacement ◽

Oxygen Adsorption ◽

First Principles Calculations ◽

Functional Theory ◽

Tio2 Anatase ◽

Technical Parameters ◽

Formation Energies

In this study, density-functional theory plane-wave pseudopotential method was employed to investigate several oxygen vacancies on TiO 2 anatase (101) surface. At first, a suitable defect-free slab model has been established by analyzing the surface energies and the atomic relaxations influenced by different technical parameters. The formation energies of different kinds of oxygen vacancies in the outermost layer have also been compared as well as the atomic displacement of the defective surfaces. It was found that the presence of bridging oxygen vacancy is more energetically favored and causes larger atomic displacement than other types of surface oxygen vacancies. The reactivity of oxygen vacancies has also been tested by both molecular and dissociated oxygen adsorption. Furthermore, we discussed the configurations and the electronic properties of O 2-adsorbed surface, and found that the appearance of oxygen adsorbate-induced states in the band gap can make the surface sensitive to visible light.

Download Full-text

First-Principles Evaluation of the Potential of Borophene as a Monolayer Transparent Conductor

10.26434/chemrxiv.5439880 ◽

2017 ◽

Author(s):

Lyudmyla Adamska ◽

Sridhar Sadasivam ◽

Jonathan J. Foley ◽

Pierre Darancet ◽

Sahar Sharifzadeh

Keyword(s):

First Principles ◽

Density Functional ◽

State Of The Art ◽

Transparent Electrode ◽

Visible Range ◽

Two Dimensional ◽

Transparent Conductor ◽

Many Body ◽

Functional Theory ◽

Many Body Perturbation Theory

Two-dimensional boron is promising as a tunable monolayer metal for nano-optoelectronics. We study the optoelectronic properties of two likely allotropes of two-dimensional boron using first-principles density functional theory and many-body perturbation theory. We find that both systems are anisotropic metals, with strong energy- and thickness-dependent optical transparency and a weak (<1%) absorbance in the visible range. Additionally, using state-of-the-art methods for the description of the electron-phonon and electron-electron interactions, we show that the electrical conductivity is limited by electron-phonon interactions. Our results indicate that both structures are suitable as a transparent electrode.

Download Full-text

Thermodynamic Stability of Hexagonal and Rhombohedral Bn at Cvd Conditions from Van der Waals Corrected First Principles Calculations

10.26434/chemrxiv.8052218.v3 ◽

2019 ◽

Author(s):

Henrik Pedersen ◽

Björn Alling ◽

Hans Högberg ◽

Annop Ektarawong

Keyword(s):

Thin Films ◽

Thermodynamic Stability ◽

First Principles ◽

Thermal Equilibrium ◽

Density Functional ◽

Van Der Waals ◽

Chemical Vapor ◽

First Principles Calculations ◽

Functional Theory ◽

The Stability

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.

Download Full-text

The Damping Term, from First Principles

10.1093/oso/9780198788669.003.0006 ◽

2017 ◽

Author(s):

Olle Eriksson ◽

Anders Bergman ◽

Lars Bergqvist ◽

Johan Hellsvik

Keyword(s):

Density Functional Theory ◽

First Principles ◽

Density Functional ◽

Spin Dynamics ◽

Damping Term ◽

Functional Theory ◽

Basic Principles ◽

Sham Equation ◽

Damping Parameter ◽

Simulation Cell

In the previous chapters we described the basic principles of density functional theory, gave examples of how accurate it is to describe static magnetic properties in general, and derived from this basis the master equation for atomistic spin-dynamics; the SLL (or SLLG) equation. However, one term was not described in these chapters, namely the damping parameter. This parameter is a crucial one in the SLL (or SLLG) equation, since it allows for energy and angular momentum to dissipate from the simulation cell. The damping parameter can be evaluated from density functional theory, and the Kohn-Sham equation, and it is possible to determine its value experimentally. This chapter covers in detail the theoretical aspects of how to calculate theoretically the damping parameter. Chapter 8 is focused, among other things, on the experimental detection of the damping, using ferromagnetic resonance.

Download Full-text

Site preference and atomic ordering in the ternary Rh5Ga2As: first-principles calculations

Zeitschrift für Kristallographie - Crystalline Materials ◽

10.1515/zkri-2021-2019 ◽

2021 ◽

Vol 0 (0) ◽

Author(s):

Nilanjan Roy ◽

Sucharita Giri ◽

Harshit ◽

Partha P. Jana

Keyword(s):

Total Energy ◽

First Principles ◽

Density Functional ◽

Structure Type ◽

Site Preference ◽

X Ray Diffraction ◽

Atomic Ordering ◽

Functional Theory ◽

The Stability ◽

Bonding Characteristics

Abstract The site preference and atomic ordering of the ternary Rh5Ga2As have been investigated using first-principles density functional theory (DFT). An interesting atomic ordering of two neighboring elements Ga and As reported in the structure of Rh5Ga2As by X-ray diffraction data only is confirmed by first-principles total-energy calculations. The previously reported experimental model with Ga/As ordering is indeed the most stable in the structure of Rh5Ga2As. The calculation detected that there is an obvious trend concerning the influence of the heteroatomic Rh–Ga/As contacts on the calculated total energy. Interestingly, the orderly distribution of As and Ga that is found in the binary GaAs (Zinc-blende structure type), retained to ternary Rh5Ga2As. The density of states (DOS) and Crystal Orbital Hamiltonian Population (COHP) are calculated to enlighten the stability and bonding characteristics in the structure of Rh5Ga2As. The bonding analysis also confirms that Rh–Ga/As short contacts are the major driving force towards the overall stability of the compound.

Download Full-text

Electron-phonon interaction in In-induced √7 ×√3 structures on Si(111) from first-principles

Physical Chemistry Chemical Physics ◽

10.1039/d0cp05234e ◽

2021 ◽

Author(s):

I. Yu. Sklyadneva ◽

Rolf Heid ◽

Pedro Miguel Echenique ◽

Evgueni Chulkov

Keyword(s):

Density Functional Theory ◽

Double Layer ◽

First Principles ◽

Linear Response ◽

Density Functional ◽

Single Layer ◽

Phonon Interaction ◽

Functional Theory ◽

Electron Phonon Interaction ◽

The Density Functional Theory

Electron-phonon interaction in the Si(111)-supported rectangular √(7 ) ×√3 phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer √(7 ) ×√3 structures, it...

Download Full-text