Numerical investigation on subsurface damage in nanometric cutting of single-crystal silicon at elevated temperatures

2021 ◽  
Vol 68 ◽  
pp. 1060-1071
Author(s):  
Changlin Liu ◽  
Xiao Chen ◽  
Jinyang Ke ◽  
Zhongdi She ◽  
Jianguo Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Numerical Investigation ◽  
Elevated Temperatures ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Nanometric Cutting

scholarly journals Subsurface damage and phase transformation in laser-assisted nanometric cutting of single crystal silicon

2020 ◽  
Vol 190 ◽  
pp. 108524 ◽  
Author(s):  
Xiao Chen ◽  
Changlin Liu ◽  
Jinyang Ke ◽  
Jianguo Zhang ◽  
Xuewen Shu ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Nanometric Cutting

scholarly journals A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

2001 ◽  
Vol 687 ◽  
Author(s):  
H.-S. Moon ◽  
L. Anand ◽  
S. M. Spearing
Keyword(s):  
High Temperature ◽  
Constitutive Model ◽  
Single Crystal ◽  
Mechanical Behavior ◽  
Elevated Temperatures ◽  
Single Crystal Silicon ◽  
Operational Environment ◽  
Localized Deformation ◽  
Creep Tests ◽  
Crystal Silicon

AbstractSilicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for the intended operational environment of high temperature and stress. In addition, preliminary work indicates that single crystal silicon has a tendency to undergo localized deformation by slip band formation. Thus it is critical to obtain a better understanding of the mechanical behavior of this material at elevated temperatures in order to properly exploit its capabilities as a structural material. Creep tests in simple compression with n-type single crystal silicon, with low initial dislocation density, were conducted over a temperature range of 900 K to 1200 K and a stress range of 10 MPa to 120 MPa. The compression specimens were machined such that the multi-slip <100> or <111> orientations were coincident with the compression axis. The creep tests reveal that response can be delineated into two broad regimes: (a) in the first regime rapid dislocation multiplication is responsible for accelerating creep rates, and (b) in the second regime an increasing resistance to dislocation motion is responsible for the decelerating creep rates, as is typically observed for creep in metals. An isotropic elasto-viscoplastic constitutive model that accounts for these two mechanisms has been developed in support of the design of the high temperature turbine structure of the MIT microengine.

Friction and wear of single-crystal silicon at elevated temperatures

1991 ◽  
Vol 26 (6) ◽  
pp. 1505-1511 ◽  
Author(s):  
D. -S. Park ◽  
S. Danyluk ◽  
M. J. McNallan
Keyword(s):  
Single Crystal ◽  
Friction And Wear ◽  
Elevated Temperatures ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Molecular Dynamics Simulation on the Mechanism of Nanometric Machining of Single-Crystal Silicon

2004 ◽  
Vol 471-472 ◽  
pp. 144-148 ◽  
Author(s):  
Hui Wu ◽  
Bin Lin ◽  
S.Y. Yu ◽  
Hong Tao Zhu
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Atomic Scale ◽  
Dynamics Simulation ◽  
Crystal Silicon ◽  
Nanometric Cutting ◽  
Simulation Techniques ◽  
Nanometric Machining

Molecular dynamics (MD) simulation can play a significant role in addressing a number of machining problems at the atomic scale. This simulation, unlike other simulation techniques, can provide new data and insights on nanometric machining; which cannot be obtained readily in any other theory or experiment. In this paper, some fundamental problems of mechanism are investigated in the nanometric cutting with the aid of molecular dynamics simulation, and the single-crystal silicon is chosen as the material. The study showed that the purely elastic deformation took place in a very narrow range in the initial stage of process of nanometric cutting. Shortly after that, dislocation appeared. And then, amorphous silicon came into being under high hydrostatic pressure. Significant change of volume of silicon specimen is observed, and it is considered that the change occur attribute to phase transition from a diamond silicon to a body-centered tetragonal silicon. The study also indicated that the temperature distributing of silicon in nanometric machining exhibited similarity to conventional machining.

Nanometric cutting of single crystal silicon surfaces modified by ion implantation

CIRP Annals ◽  
2011 ◽  
Vol 60 (1) ◽  
pp. 527-530 ◽  
Author(s):  
F.Z. Fang ◽  
Y.H. Chen ◽  
X.D. Zhang ◽  
X.T. Hu ◽  
G.X. Zhang
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Silicon ◽  
Nanometric Cutting
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