Inverse spin population near ferromagnet/nonmagnetic semiconductor contact

2004 ◽  
Vol 272-276 ◽  
pp. 1917-1918 ◽  
Author(s):  
N.G. Bebenin ◽  
V.V. Ustinov
Keyword(s):  
Spin Population ◽  
Semiconductor Contact

scholarly journals Correction to Thiolate Spin Population of Type I Copper in Azurin Derived from 33S Hyperfine Coupling

2017 ◽  
Vol 56 (16) ◽  
pp. 10117-10117
Author(s):  
Marie Ramirez Cohen ◽  
Netanel Mendelman ◽  
Marina Radoul ◽  
Tiffany D. Wilson ◽  
Masha G. Savelieff ◽  
...  
Keyword(s):  
Hyperfine Coupling ◽  
Type I ◽  
Spin Population

scholarly journals The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Haoyang Cui ◽  
Yongpeng Xu ◽  
Junjie Yang ◽  
Naiyun Tang ◽  
Zhong Tang
Keyword(s):  
Schottky Barrier ◽  
Response Curve ◽  
Photoelectric Effect ◽  
Ultrafast Laser ◽  
Characteristic Parameters ◽  
Pv Array ◽  
Array Electrode ◽  
Photo Response ◽  
Positive Peak ◽  
Semiconductor Contact

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model ofpnjunction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced fromp-njunction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by thepnjunction.

Metal semiconductor contact: Resistivity and noise

1973 ◽  
Vol 16 (12) ◽  
pp. 1399-1405 ◽  
Author(s):  
J.P. Nougier ◽  
M. Rolland
Keyword(s):  
Contact Resistivity ◽  
Semiconductor Contact

Nature of an ohmic metal-semiconductor contact

Physica ◽  
1960 ◽  
Vol 26 (11) ◽  
pp. 889 ◽  
Author(s):  
G. Diemer
Keyword(s):  
Semiconductor Contact

Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

2020 ◽  
Vol 8 (1) ◽  
pp. 201-208 ◽  
Author(s):  
Taikyu Kim ◽  
Jeong-Kyu Kim ◽  
Baekeun Yoo ◽  
Hongwei Xu ◽  
Sungyeon Yim ◽  
...  
Keyword(s):  
Energy Barrier ◽  
Field Effect Transistors ◽  
Semiconductor Interface ◽  
Fermi Level Pinning ◽  
Switching Property ◽  
Switching Characteristics ◽  
Gap States ◽  
P Type ◽  
Tin Monoxide ◽  
Semiconductor Contact

Metal–interlayer–semiconductor contact reduces metal-induced gap states, mitigating Fermi-level pinning at metal/semiconductor interface. Here, switching property of p-type SnO FET is enhanced by increasing electron Schottky barrier at off-state.

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