scholarly journals The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Haoyang Cui ◽  
Yongpeng Xu ◽  
Junjie Yang ◽  
Naiyun Tang ◽  
Zhong Tang
Keyword(s):  
Schottky Barrier ◽  
Response Curve ◽  
Photoelectric Effect ◽  
Ultrafast Laser ◽  
Characteristic Parameters ◽  
Pv Array ◽  
Array Electrode ◽  
Photo Response ◽  
Positive Peak ◽  
Semiconductor Contact

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model ofpnjunction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced fromp-njunction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by thepnjunction.

scholarly journals Graphene Schottky Junction on Pillar Patterned Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 659 ◽  
Author(s):  
Giuseppe Luongo ◽  
Alessandro Grillo ◽  
Filippo Giubileo ◽  
Laura Iemmo ◽  
Mindaugas Lukosius ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Light Exposure ◽  
Photovoltaic Effect ◽  
Reverse Current ◽  
Charge Carriers ◽  
Graphene Monolayer ◽  
Temperature Dependent ◽  
Thermal Generation ◽  
Photo Response

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector.

scholarly journals First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
High Performance ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Schottky Barriers ◽  
First Principles Study ◽  
Metal Interfaces ◽  
Semiconductor Contact

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

scholarly journals How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

ACS Omega ◽  
2017 ◽  
Vol 2 (8) ◽  
pp. 4173-4179 ◽  
Author(s):  
Lingming Yang ◽  
Adam Charnas ◽  
Gang Qiu ◽  
Yu-Ming Lin ◽  
Chun-Chieh Lu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Black Phosphorus ◽  
Semiconductor Contact

scholarly journals Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 28
Author(s):  
Fangzhou Liang ◽  
Wen Chen ◽  
Meixin Feng ◽  
Yingnan Huang ◽  
Jianxun Liu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Speed ◽  
Ultraviolet Photodetector ◽  
Si Substrate ◽  
Si Doping ◽  
Low Dislocation Density ◽  
Photo Response ◽  
Si Doped ◽  
Gan On Si ◽  
Ultraviolet Photodetectors

GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time.

Electrical Properties of AuZnCr Multilayer Metallizations to InP

1994 ◽  
Vol 337 ◽  
Author(s):  
Thomas clausen ◽  
Otto leistiko
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Limiting Factor ◽  
Barrier Heights ◽  
High Annealing ◽  
P Type ◽  
Multilayer Metallization ◽  
Semiconductor Contact ◽  
Range Of Values ◽  
Quality Metal

ABSTRACTThe electrical properties of a Au/Cr/(Au)/Zn/Au (50/25/(50)/100/2 nm) multilayer metallization to n- and p-type InP have been investigated. The results consistently show that it is possible to modulate the effective Schottky barrier height of the metal-semiconductor contact over a large range of values extending from ∼0 eV for contacts to p-type InP to values close to the bandgap of the InP (∼1.3 eV) for contacts to n-type InP. The limiting factor in the developement of the highest quality metal-semiconductor diodes to n-type InP with very high Schottky barrier heights is found to be diffusion of Au elements at high annealing temperatures above 500°C, as determined from I-V, C-V and DLTS plots.

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