An effective process was developed using electroremoval as a precision removal-process
for indium tin oxide (ITO) thin-film nanostructures from the displays’ color filter surface of thin film
transistor liquid crystal displays (TFT-LCDs). The low yield of ITO thin-film deposition is an
important factor in semiconductor production. By establishing a recycling process using the
ultra-precise removal of thin-film nanostructures, the semiconductor optoelectronic industry can
effectively recycle defective products, minimizing both production costs and pollution. For the
removal-process, high rotational speed of the electrode (negative-pole) elevates the discharge
mobility and results in improved removal. High flow velocity of the electrolyte provides larger
discharge mobility and greater removal ability. An adequate gap-width between the
negative-electrode and the ITO surface, or a higher working temperature, results in a higher removal
rate for ITO thin-films. Also, adequate feed rate of the color filter combined with enough electrical
power produces a fast removal rate. Pulsed direct current can improve the effect of dregs discharge
and is advantageous to associate with the fast feed rate of the workpiece (displays’ color filter), but it
raises the current rating. Electrochemical removal requires only a short period of time to remove the
ITO thin-film easily and cleanly.
Highly coercive thin-film nanostructures