Phase diagrams of site diluted ferromagnetic thin film

The thermodynamic equilibrium of structures consisting of a thin film silicide (TiSi2 or CoSi2) on doped Si (with As or B) is investigated. Isothermal sections of the ternary phase diagrams for Ti–Si–B, Co–Si–B, Ti–Si–As, and Co–Si–As have been evaluated, indicating the stability of high B concentrations in Si underneath a CoSi2 layer, the instability of high As concentrations in Si underneath a CoSi2 layer, and of B and As concentrations underneath a TiSi2 layer. The obtained thermodynamic predictions agree very well with experimental results (i) on the redistribution of dopants during silicide formation, (ii) on the diffusion of dopants from an ion implanted silicide, and (iii) on the stability of highly doped regions underneath the silicide, both for the case of TiSi2 and CoSi2. It is shown that even though the inaccuracy of reported thermodynamic data is substantial, thermodynamic calculations provide a useful guidance and are consistent with the experimental results.

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PHASE DIAGRAMS FOR FILMS OF TWO-COMPONENT MAGNETIC ALLOYS

International Journal of Modern Physics B ◽

10.1142/s0217979200002417 ◽

2000 ◽

Vol 14 (28) ◽

pp. 3279-3288 ◽

Cited By ~ 8

Author(s):

YUNSONG ZHOU ◽

D. L. LIN

Keyword(s):

Thin Film ◽

Phase Diagrams ◽

Exchange Coupling ◽

Relative Concentration ◽

Magnetic Films ◽

Coupling Constants ◽

Cumulant Expansion ◽

Experimental Phase ◽

Magnetic Alloys ◽

Two Component

Phase diagrams for diluted bulk magnetic alloys and two-component magnetic films are investigated. On the basis of the Ising model for layered structures, we calculate the transition temperature as a function of the relative concentration x by means of the variational cumulant expansion. Both the ferromagnetic and antiferromagnetic interactions are considered and the exchange coupling constants between different atoms are treated as adjustable parameters. Experimental phase diagrams in the Tc-x plane for both La 2 Cu 1-x Zn x O 4 and Sm 2 Fe 14-x Co x Si 2 are qualitatively accounted for, and phase diagrams for a randomly mixed two-component thin film of magnetic alloys are predicted.

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Processing-phase diagrams: a new tool for solution-deposited thin-film development applied to the In5O(OPri)13–In2O3 system

Journal of Materials Chemistry C ◽

10.1039/c3tc31930j ◽

2014 ◽

Vol 2 (13) ◽

pp. 2360 ◽

Cited By ~ 2

Author(s):

Robert M. Pasquarelli ◽

Maikel F. A. M. van Hest ◽

Philip A. Parilla ◽

John D. Perkins ◽

Ryan O'Hayre ◽

...

Keyword(s):

Thin Film ◽

Phase Diagrams ◽

Film Development

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Construction of the misfit strain–temperature phase diagrams of epitaxial BiFeO3 thin film

Computational Materials Science ◽

10.1016/j.commatsci.2008.01.022 ◽

2008 ◽

Vol 44 (1) ◽

pp. 82-85 ◽

Cited By ~ 3

Author(s):

H. Ma ◽

L. Chen

Keyword(s):

Thin Film ◽

Phase Diagrams ◽

Misfit Strain ◽

Temperature Phase ◽

Bifeo3 Thin Film

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Phase diagrams and magnetic properties of the mixed spin-1 and spin-3/2 Ising ferromagnetic thin film: Monte Carlo treatment

Chinese Physics B ◽

10.1088/1674-1056/28/2/027501 ◽

2019 ◽

Vol 28 (2) ◽

pp. 027501 ◽

Cited By ~ 4

Author(s):

B Boughazi ◽

M Boughrara ◽

M Kerouad

Keyword(s):

Thin Film ◽

Monte Carlo ◽

Magnetic Properties ◽

Phase Diagrams ◽

Mixed Spin

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Magnetic Structures in Nonmag-/MAG-/Nonmag-Netic Sandwiches

MRS Proceedings ◽

10.1557/proc-384-227 ◽

1995 ◽

Vol 384 ◽

Author(s):

Yoshiyuki Kawazoe ◽

Xiao Hu

Keyword(s):

Thin Film ◽

Film Thickness ◽

Phase Diagrams ◽

Exchange Coupling ◽

Spin Reorientation ◽

Scaling Relations ◽

Magnetic Thin Film ◽

Magnetic Structures ◽

Spin Reorientation Transition ◽

Variational Formalism

ABSTRACTSpin-reorientation transition in magnetic thin film sandwiched by nonmagnetic materials is clarified by means of the variational formalism. Phase diagrams of the magnetization configuration are presented. Scaling relations among the film thickness, exchange coupling and magnetic anisotropies are revealed. A formula for the interface anisotropy is presented.

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Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

Journal of Materials Research ◽

10.1557/jmr.1989.0815 ◽

1989 ◽

Vol 4 (4) ◽

pp. 815-820 ◽

Cited By ~ 39

Author(s):

E. G. Colgan ◽

J. W. Mayer

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Phase Diagrams ◽

Refractory Metals ◽

Rutherford Backscattering ◽

Phase Identification ◽

X Ray Diffraction ◽

X Ray ◽

Scanning Electron

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

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