Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

1989 ◽  
Vol 4 (4) ◽  
pp. 815-820 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Phase Diagrams ◽  
Refractory Metals ◽  
Rutherford Backscattering ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Ferroelectric properties in all solution prepared Bi6Fe2Ti3O18/Ba0.92La0.08SnO3 thin films

2016 ◽  
Vol 30 (35) ◽  
pp. 1650394
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Coercive Field ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Scanning Electron

In this paper, all solution processing is used to prepare both the transparent conducting Ba[Formula: see text]La[Formula: see text]SnO3 (BLSO) thin films as bottom electrodes and ferroelectric Bi6Fe2Ti3O[Formula: see text] (BFTO) thin films. The derived BFTO thin films are characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The derived thin film is polycrystalline with dense microstructures. The remnant polarization [Formula: see text] at the measurement frequency of 2 kHz can reach [Formula: see text] under the 500 kV/cm electric field and the coercive field [Formula: see text] is 410 kV/cm. The results will provide a feasible route to prepare BFTO thin films on transparent conducting bottom electrodes to realize multifunctionality.

MOCVD of CuInE2 (Where E = S or Se) and Related Materials for Solar Cell Devices

1999 ◽  
Vol 606 ◽  
Author(s):  
Michael Kemmler ◽  
Michael Lazell ◽  
Paul O'brien ◽  
David J. Otwaya
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CuInE2(where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Structural and Optical Properties of Cu2MnSnS4 Thin Film Fabricated by Sol-Gel Technique

2015 ◽  
Vol 814 ◽  
pp. 39-43 ◽  
Author(s):  
Lei Lei Chen ◽  
Hong Mei Deng ◽  
Ke Zhi Zhang ◽  
Ling Huang ◽  
Jian Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gel Technique ◽  
Scanning Electron

Cu2MnSnS4 thin film was successfully prepared by a sol-gel technique on soda lime glass substrate from metal salts and thiourea. The structural and morphological properties of the fabricated film were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The combination of the X-ray diffraction results and Raman spectroscopy reveal that this obtained layer is composed by Cu2MnSnS4 phase and has a stannite structure with preferential orientation along the (112) direction. The scanning electron microscopy and atomic force microscopy results show that the synthesized thin film is smooth and compact without any visible cracks or pores. The band gap of the Cu2MnSnS4 thin film is about 1.29 eV determined by the UV-vis-NIR absorption spectra measurement, which indicates it has potential applications in solar cells.

Epitaxial Growth Of Nickel and Cobalt Germanides On Germanium

1987 ◽  
Vol 91 ◽  
Author(s):  
Y.F. Hsieh ◽  
L.J. Chen ◽  
E.D. Marshall ◽  
S.S. Lau
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Epitaxial Growth ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle ◽  
Scanning Electron

ABSTRACTTransmission and scanning electron microscopy, Rutherford backscattering-channeling and Read camera glancing angle x-ray diffraction techniques have been applied to study the epitaxial growth of nickel and cobalt germanides on germanium.NiGe, Co5Ge7 and CoGe2 were found to grow epitaxially on both (001) and (111)Ge. More extensive epitaxy on (111)Ge is correlated with better lattice matches at the germanide/Ge interfaces than those on (001)Ge for these epitaxial germanides.

Microraman Spectroscopy and X-Ray Diffraction Studies of Ti-W-O Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Luigi Sangaletti ◽  
Elza Bontempi ◽  
Laura E. Depero ◽  
P. Galinetto ◽  
Silvio Groppelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Microraman Spectroscopy ◽  
Scanning Electron

AbstractThin films of the Ti-W-O system grown by r.f. reactive sputtering from a Ti-W (10%–90% weight) target have been studied by Raman and microraman spectroscopy, X-ray diffraction and scanning electron microscopy with the aim to investigate their microstructural and morphological properties. To this purpose, the kinetics of structural transformations at different temperatures (600 °C, and 800 °C) have been studied, and the effect of Ti on the WO3 lattice has been singled out. The results show that annealing at different temperatures induces a microstructural evolution from the amorphous phase of the as-deposited thin film to WO3 crystalline phases via an intermediate cubic disordered phase of WO3. The effect of Ti on this cubic phase and on the thin film morphology is also investigated with the aid of microraman and scanning electron microscopy analysis. The results show that two distinct phases arise upon long annealing treatments; namely, small crystallites belonging to the WO3 monoclinic phase are dispersed on a layer composed of a disordered cubic WO3 phase with a high Ti content.

Characterization of Silicon thin Film Deposited by E-Beam Evaporator for Flexible Display

2005 ◽  
Vol 862 ◽  
Author(s):  
In-Hyuk Song ◽  
Sang-Myeon Han ◽  
Jung-Hyun Park ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Silicon Film ◽  
X Ray Diffraction ◽  
Silicon Thin Film ◽  
Flexible Display ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

AbstractThe structure and crystal growth of the silicon thin film deposited by e-beam evaporator have been studied with use of scanning electron microscopy (SEM), x-ray diffraction and transmission electron microscopy (TEM). The silicon thin film is deposited at room temperature for flexible display. It is found that the silicon film deposited by e-beam evaporator has polysilicon structure by scanning electron microscopy (SEM). SEM image also shows that grain size of the silicon film is about 50nm. X-ray diffraction of the silicon thin film represents that the orientation of the silicon film is (201). We have also investigated the structure and the crystal growth of the silicon film after the silicon film is irradiated by XeCl excimer laser with various energy densities. Transmission electron microscopy shows that the irradiated silicon thin film has low intra-grain defects and sharp grain boundary.

Identification of calcium oxalate crystals in dried or fixed tobacco leaf

1984 ◽  
Vol 42 ◽  
pp. 288-289
Author(s):  
Vicki L. Baliga ◽  
Mary Ellen Counts
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Calcium Oxalate ◽  
Growth And Development ◽  
Polarized Light ◽  
Calcium Oxalate Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

Calcium is an important element in the growth and development of plants and one form of calcium is calcium oxalate. Calcium oxalate has been found in leaf seed, stem material plant tissue culture, fungi and lichen using one or more of the following methods—polarized light microscopy (PLM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x-ray diffraction.Two methods are presented here for qualitatively estimating calcium oxalate in dried or fixed tobacco (Nicotiana) leaf from different stalk positions using PLM. SEM, coupled with energy dispersive x-ray spectrometry (EDS), and powder x-ray diffraction were used to verify that the crystals observed in the dried leaf with PLM were calcium oxalate.

Environmental scanning electron microscopy of fresh human gallstones reveals new morphologies of precipitated calcium salts

1992 ◽  
Vol 50 (2) ◽  
pp. 1322-1323
Author(s):  
Howard S. Kaufman ◽  
Keith D. Lillemoe ◽  
John T. Mastovich ◽  
Henry A. Pitt
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Environmental Scanning Electron Microscopy ◽  
Environmental Scanning ◽  
X Ray Diffraction ◽  
Calcium Salts ◽  
Cholesterol Gallstones ◽  
X Ray ◽  
Ca Carbonate ◽  
Scanning Electron

Gallstones contain precipitated cholesterol, calcium salts, and proteins. Calcium (Ca) bilirubinate, palmitate, phosphate, and carbonate occurring in gallstones have variable morphologies but characteristic windowless energy dispersive x-ray (EDX) spectra. Previous studies of gallstone microstructure and composition using scanning electron microscopy (SEM) with EDX have been limited to dehydrated samples. In this state, Ca bilirubinates appear as either glassy masses, which predominate in black pigment stones, or as clusters, which are found mostly in cholesterol gallstones. The three polymorphs of Ca carbonate, calcite, vaterite, and aragonite, have been identified in gallstones by x-ray diffraction, however; the morphologies of these crystals vary in the literature. The purpose of this experiment was to study fresh gallstones by environmental SEM (ESEM) to determine if dehydration affects gallstone Ca salt morphology.Gallstones and bile were obtained fresh at cholecystectomy from 6 patients. To prevent dehydration, stones were stored in bile at 37°C. All samples were studied within 4 days of procurement.

PENINGKATAN LAJU DISOLUSI ACYCLOVIR DENGAN METODE SISTEM DISPERSI PADAT MENGGUNAKAN POLOXAMER 188

2016 ◽  
Vol 5 (1) ◽  
pp. 6
Author(s):  
Budi Setiawan ◽  
Erizal Zaini ◽  
Salman Umar
Keyword(s):  
Electron Microscopy ◽  
Thermal Analysis ◽  
Scanning Electron Microscopy ◽  
Fourier Transform ◽  
Differential Thermal Analysis ◽  
Fourier Transform Infrared ◽  
X Ray Diffraction ◽  
Poloxamer 188 ◽  
X Ray ◽  
Scanning Electron

Sebuah penelitian tentang sistem dispersi padat dari asiklovir dengan poloxamer 188 telah dilakukan formulasi dengan pencampuran secara fisika dengan rasio 1 : 1, 1 : 3, 1 : 5 dan dispersi padat 1 : 1, 1 : 3, 1 : 5 dan penggilingan 1:1 sebagai pembanding. Dispersi padat dibuat menggunakan metode pencairan (fusi), yang digabung dengan poloxamer 188 pada hotplate kemudian asiklovir dimasukkan ke dalam hasil poloxamer 188 lalu di kocok hingga membentuk masa homogen. Semua formula yang terbentuk termasuk asiklovir poloxamer 188 murni dianalisis karakterisasinya dengan Differential Thermal Analysis (DTA), X-ray Diffraction, Scanning Electron Microscopy (SEM), dan Fourier Transform Infrared (FTIR), kemudian pengambilan dilakukan  (penentuan kadar) mengunakan spektrofotometer UV pada panjang gelombang 257,08 nm dan uji laju disolusi dengan aquadest bebas CO2 menggunakan metode dayung. Hasil pengambilan  (penentuan kadar) menunjukkan bahwa semua formula memenuhi persyaratan farmakope Amerika edisi 30 dan farmakope Indonesia edisi 4 yaitu 95-110%. Sedangkan hasil uji laju disolusi untuk campuran fisik 1: 1, dan dispersi padat 1: 1, dan penggilingan 1: 1 menunjukkan peningkatan yang nyata dibandingkan asiklovir murni. Hal ini juga dapat dilihat dari hasil perhitungan statistik  menggunakan analisis varian satu arah  SPSS 17.

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