Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing

Total yields of paramagnetic species, their optical bleaching and thermal annealing in acetic, propionic, a-butyric, isobutyric, and pivalic acid γ-irradiated at 77 K were followed by ESR spectroscopy. Radical anions, always found after irradiation, disappear during optical bleaching without formation of any paramagnetic product. During thermal annealing they are converted almost quantitatively into the α-radicals of the respective acid, with the exception of pivalic acid. Amounts of radical anions were estimated from the difference of integrated ESR spectra taken before and after optical bleaching. The results show that approximately equal amounts of the reduction and oxidation paramagnetic products of the γ-irradiation can be detected.

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Thermal stability and photoluminescence properties of RE-doped (RE = Ho, Er, Tm) alumina nanoparticles in bulk and fiber-optic silica glass

Optical Materials ◽

10.1016/j.optmat.2021.111239 ◽

2021 ◽

Vol 118 ◽

pp. 111239

Author(s):

P. Vařák ◽

J. Mrázek ◽

A.A. Jasim ◽

S. Bysakh ◽

A. Dhar ◽

...

Keyword(s):

Thermal Stability ◽

Silica Glass ◽

Fiber Optic ◽

Alumina Nanoparticles ◽

Photoluminescence Properties

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Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing

Journal of Materials Science Letters ◽

10.1007/bf00625018 ◽

1996 ◽

Vol 15 (17) ◽

pp. 1545-1547

Author(s):

D. Y. Kim ◽

Y. T. Oh ◽

T. W. Kang ◽

T. W. Kim

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Formation Mechanism ◽

Emission Band ◽

Ion Implanted

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Pulsed thermal annealing of ion‐implanted silicon

Journal of Applied Physics ◽

10.1063/1.332356 ◽

1983 ◽

Vol 54 (5) ◽

pp. 2413-2418 ◽

Cited By ~ 15

Author(s):

P. D. Scovell ◽

E. J. Spurgin

Keyword(s):

Thermal Annealing ◽

Ion Implanted

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Influence of Thermal Annealing on the Electrical Properties of Poly(3-hexylthiophene)-Based Thin Film Diodes

Zeitschrift für Naturforschung A ◽

10.1515/zna-2007-10-1109 ◽

2007 ◽

Vol 62 (10-11) ◽

pp. 609-619 ◽

Cited By ~ 8

Author(s):

Zivayi Chiguvare ◽

Jürgen Parisi ◽

Vladimir Dyakonov

Keyword(s):

Thin Film ◽

Thermal Annealing ◽

Indium Tin Oxide ◽

Bulk Heterojunction ◽

Polymer Chains ◽

Hole Injection ◽

Before And After ◽

Output Characteristics ◽

Al Thin Film ◽

Poly Styrene Sulfonate

The effects of thermal annealing on the bulk transport properties of poly(3-hexylthiophene) (P3HT) were studied by analyzing room temperature current-voltage characteristics of polymer thin films sandwiched between indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS) and aluminum electrodes, before and after a thermal annealing step. It was observed that annealing takes place in two steps: (1) Dedoping of the polymer of impurities such as oxygen, remnant solvent, water, leading to a decrease in the conductivity of the film, and (2) thermally induced motion of the polymer chains leading to closer packing, thus, stronger inter-chain interaction and, consequently, increase in conductivity. It was also observed that the ITO/PEDOT:PSS/P3HT hole injection barrier increases on annealing the ITO/PEDOT:PSS/P3HT/Al thin film devices. The implications of impurity dedoping and closer packing on the output characteristics of bulk heterojunction polymer-fullerene thin film solar cells are discussed.

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Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

MRS Proceedings ◽

10.1557/proc-639-g6.3 ◽

2000 ◽

Vol 639 ◽

Author(s):

Laurent Grenouillet ◽

Catherine Bru-Chevallier ◽

Gérard Guillot ◽

Philippe Gilet ◽

Philippe Ballet ◽

...

Keyword(s):

Quantum Well ◽

Thermal Annealing ◽

Low Temperatures ◽

Blue Shift ◽

Emission Peak ◽

Single Quantum ◽

Photoluminescence Properties ◽

Single Quantum Well ◽

Peak Energy ◽

Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

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