Proton irradiation creep of beta-silicon carbide

2011 ◽  
Vol 418 (1-3) ◽  
pp. 198-206 ◽  
Author(s):  
Vani Shankar ◽  
Gary S. Was
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Irradiation Creep

Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

2014 ◽  
Vol 455 (1-3) ◽  
pp. 73-80 ◽  
Author(s):  
T. Koyanagi ◽  
K. Shimoda ◽  
S. Kondo ◽  
T. Hinoki ◽  
K. Ozawa ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Irradiation Creep ◽  
Nano Powder ◽  
Neutron Fluences ◽  
Sintered Silicon

Effect of 3C-SiC Irradiation with 8 MeV Protons

2017 ◽  
Vol 897 ◽  
pp. 311-314 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Boris Ya. Ber ◽  
Gagik A. Oganesyan ◽  
Sergey V. Belov ◽  
Natalia. V. Seredova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Initial Concentration ◽  
A Value ◽  
Full Compensation ◽  
Mev Protons

Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm-1. The full compensation of samples with an initial concentration of (1-2) x 1018 cm -3 was estimated to occur at doses of about 6 x 1015 cm -2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 369-372
Author(s):  
Alexander M. Ivanov ◽  
Alexander A. Lebedev ◽  
V.V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Proton Irradiation ◽  
Defect Formation ◽  
Radiation Defects ◽  
Proton Scattering ◽  
Silicon Carbide Film ◽  
Low Energies ◽  
Simulated Distribution ◽  
Recoil Atoms ◽  
Mev Protons

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation

2011 ◽  
Vol 45 (2) ◽  
pp. 141-144 ◽  
Author(s):  
A. M. Ivanov ◽  
V. V. Kozlovski ◽  
N. B. Strokan ◽  
A. A. Lebedev
Keyword(s):  
Silicon Carbide ◽  
Energy Distribution ◽  
Proton Irradiation ◽  
Radiation Defects ◽  
Recoil Atoms

scholarly journals Proton irradiation creep of FM steel T91

2015 ◽  
Vol 459 ◽  
pp. 183-193 ◽  
Author(s):  
Cheng Xu ◽  
Gary S. Was
Keyword(s):  
Proton Irradiation ◽  
Irradiation Creep
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