Blue shift in the optical transitions of ZnO thin film due to an external electric field

2018 ◽  
Vol 112 ◽  
pp. 94-99 ◽  
Author(s):  
H.A. Qayyum ◽  
M.F. Al-Kuhaili ◽  
S.M.A. Durrani ◽  
T. Hussain ◽  
M. Ikram
ACS Omega ◽  
2018 ◽  
Vol 3 (8) ◽  
pp. 8683-8690 ◽  
Author(s):  
Tássia Karina Walter ◽  
Cecília Fabiana da Gama Ferreira ◽  
Jorge Iulek ◽  
Elaine Machado Benelli

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9596-9604 ◽  
Author(s):  
Bin Liu ◽  
Jinlei Wang ◽  
Cuijin Pei ◽  
Lichao Ning ◽  
Lijuan Cheng ◽  
...  

Herein, we developed an [001] orientated ZnO thin film photovoltaic device without p–n junction. On the basis of the presence of the internal electric field in ZnO thin film, we proposed a new physical mechanism of photon-to-electron conversion.


2018 ◽  
Vol 457 ◽  
pp. 97-102 ◽  
Author(s):  
K. Nakamura ◽  
A.-M. Pradipto ◽  
T. Akiyama ◽  
T. Ito ◽  
T. Oguchi ◽  
...  

2009 ◽  
Vol 421-422 ◽  
pp. 107-110
Author(s):  
Takeshi Yokota ◽  
Shotaro Murata ◽  
Shinya Kito ◽  
Manabu Gomi

We have investigated the relationships between the electric field-induced resistance change and the strength of the exchange interaction of the Cr2O3/ La0.7Sr0.3MnO3 (LSMO) magnetic hetero system. The hetero system subjected to field cooling (FC) showed a positive shift in the magnetization curves due to an exchange bias. The exchange bias field changed depending on the FC field. Resulting from the exchange behaviors, the resistance of LSMO film was changed by the application of an electric field to the Cr2O3 gate. This resistance change is more likely due to the interface interaction strength between the Cr2O3 and LSMO film


2004 ◽  
Vol 79 (4-6) ◽  
pp. 807-809 ◽  
Author(s):  
C. Hirose ◽  
Y. Matsumoto ◽  
Y. Yamamoto ◽  
H. Koinuma

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