Microstructural characterization of the cycling behavior of electrodeposited manganese oxide supercapacitors using 3D electron tomography

AbstractCorrelative electron tomography and atom probe tomography have been carried out successfully on the same region of a commercial 8090 aluminum alloy (Al-Li-Mg-Cu). The combination of the two techniques allows accurate geometric reconstruction of the atom probe tomography data verified by crystallographic information retrieved from the reconstruction. Quantitative analysis of the precipitate phase compositions and volume fractions of each phase have been obtained from the atom probe tomography and electron tomography at various scales, showing strong agreement between both techniques.

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Morphology-controlled Growth of Manganese Oxide Electrodes

MRS Proceedings ◽

10.1557/opl.2011.1067 ◽

2011 ◽

Vol 1333 ◽

Author(s):

Banafsheh Babakhani ◽

Douglas G. Ivey

Keyword(s):

Manganese Oxide ◽

Thin Sheet ◽

Microstructural Characterization ◽

Electrochemical Analysis ◽

Retention Rates ◽

Thin Sheets ◽

Si Substrates ◽

Oxide Electrodes ◽

Deposition Parameters

ABSTRACTManganese oxide electrodes are synthesized by anodic deposition on Au coated Si substrates from acetate-containing aqueous solutions. By changing the deposition parameters including deposition current density, electrolyte composition, pH and temperature, a series of nanocrystalline manganese oxide electrodes with various morphologies (non–uniform continuous coatings, rod–like structures, aggregated rods and thin sheets) is obtained. Detailed microstructural characterization of as-deposited electrodes is conducted using scanning electron microscopy (SEM).Electrochemical analysis using cyclic voltammetry showed that manganese oxide electrodes with rod–like and thin sheet morphology exhibit enhanced electrochemical performance by improving manganese oxide utilization. The highest specific capacitance (~230 F g−1) and capacitance retention rates (~88%) are obtained for manganese oxide thin sheets after 250 cycles in 0.5M Na2SO4 at 20 mV s−1.

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Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088129 ◽

1991 ◽

Vol 49 ◽

pp. 762-763

Author(s):

M.A. Parker ◽

K.E. Johnson ◽

C. Hwang ◽

A. Bermea

Keyword(s):

Magnetic Recording ◽

Electron Probe ◽

Microstructural Characterization ◽

Crystallographic Structure ◽

Recording Media ◽

Layer By Layer ◽

Cross Sectional ◽

New Techniques ◽

Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

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Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126433 ◽

1987 ◽

Vol 45 ◽

pp. 326-327

Author(s):

A.K. Rai ◽

A.K. Petford-Long ◽

A. Ezis ◽

D.W. Langer

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Microstructural Characterization ◽

Almost Everywhere ◽

Spacer Layer ◽

Good Contact ◽

The Relationship ◽

Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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Microstructural characterization of a cast RENi5-based alloy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151714 ◽

1993 ◽

Vol 51 ◽

pp. 1176-1177

Author(s):

G. M. Micha ◽

L. Zhang

Keyword(s):

Electron Microscopy ◽

Rare Earth ◽

Microstructural Characterization ◽

Binary Compound ◽

Nickel Metal ◽

Cast Material ◽

Nickel Metal Hydride ◽

Transmission Electron ◽

Cast Condition

RENi5 (RE: rare earth) based alloys have been extensively evaluated for use as an electrode material for nickel-metal hydride batteries. A variety of alloys have been developed from the prototype intermetallic compound LaNi5. The use of mischmetal as a source of rare earth combined with transition metal and Al substitutions for Ni has caused the evolution of the alloy from a binary compound to one containing eight or more elements. This study evaluated the microstructural features of a complex commercial RENi5 based alloy using scanning and transmission electron microscopy.The alloy was evaluated in the as-cast condition. Its chemistry in at. pct. determined by bulk techniques was 12.1 La, 3.2 Ce, 1.5 Pr, 4.9 Nd, 50.2 Ni, 10.4 Co, 5.3 Mn and 2.0 Al. The as-cast material was of low strength, very brittle and contained a multitude of internal cracks. TEM foils could only be prepared by first embedding pieces of the alloy in epoxy.

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