scholarly journals Low power multilevel resistive switching in titanium oxide-based RRAM devices by interface engineering

2021 ◽  
Vol 6 (4) ◽  
pp. 601-610
Author(s):  
S.P. Swathi ◽  
S. Angappane
Keyword(s):  
Low Power ◽  
Titanium Oxide ◽  
Resistive Switching ◽  
Interface Engineering

Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM

2013 ◽  
Vol 109 ◽  
pp. 385-388 ◽  
Author(s):  
Daeseok Lee ◽  
Jiyong Woo ◽  
Euijun Cha ◽  
Seonghyun Kim ◽  
Wootae Lee ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Interface Engineering ◽  
Filament Type

A two-dimensional polymer memristor based on conformational change with tunable resistive switching behaviors

2021 ◽  
Author(s):  
Yaru Song ◽  
Guangyuan Feng ◽  
Lingli Wu ◽  
Enbing Zhang ◽  
Chenfang Sun ◽  
...  
Keyword(s):  
Low Power ◽  
Conformational Change ◽  
Resistive Switching ◽  
Two Dimensional ◽  
Change Mechanism

In this work, through rational monomer design we integrated the conformational change mechanism into a two-dimensional covalent polymer and implemented 3 different low-power memory behaviors on the same device by...

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

2012 ◽  
Vol 10 (1) ◽  
pp. 013102-13105 ◽  
Author(s):  
Jianwei Zhao Jianwei Zhao ◽  
Fengjuan Liu Fengjuan Liu ◽  
Jian Sun Jian Sun ◽  
Haiqin Huang Haiqin Huang ◽  
Zuofu Hu Zuofu Hu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

2009 ◽  
Vol 105 (11) ◽  
pp. 114103 ◽  
Author(s):  
Ch. Walczyk ◽  
Ch. Wenger ◽  
R. Sohal ◽  
M. Lukosius ◽  
A. Fox ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Memory Applications

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

2011 ◽  
Vol 22 (25) ◽  
pp. 254023 ◽  
Author(s):  
Kyungah Seo ◽  
Insung Kim ◽  
Seungjae Jung ◽  
Minseok Jo ◽  
Sangsu Park ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Resistive Switching ◽  
Spike Timing ◽  
Spike Timing Dependent Plasticity ◽  
Switching Device ◽  
Dependent Plasticity ◽  
Analog Memory
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