Photocatalytic and toxicity evaluation of local dyeing wastewater by aluminium/boron doped WO3 nanoparticles

2021 ◽  
Vol 44 ◽  
pp. 102376
Author(s):  
J.O. Tijani ◽  
M.N. Abdullahi ◽  
M.T. Bankole ◽  
S. Mustapha ◽  
T.C. Egbosiuba ◽  
...  
Keyword(s):  
Dyeing Wastewater ◽  
Toxicity Evaluation ◽  
Boron Doped

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

A TEM-APFIM INVESTIGATION OF BORON-DOPED Ni3Al

1986 ◽  
Vol 47 (C2) ◽  
pp. C2-209-C2-214 ◽  
Author(s):  
J. A. HORTON ◽  
M. K. MILLER
Keyword(s):  
Boron Doped

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

DICLOFENAC REMOVAL FROM AQUEOUS SOLUTIONS BY ELECTROOXIDATION AT BORON-DOPED DIAMOND (BDD) ELECTRODE

2015 ◽  
Vol 14 (6) ◽  
pp. 1339-1345
Author(s):  
Monica Ihos ◽  
Florica Manea ◽  
Maria Jitaru ◽  
Corneliu Bogatu ◽  
Rodica Pode
Keyword(s):  
Aqueous Solutions ◽  
Boron Doped Diamond ◽  
Bdd Electrode ◽  
Boron Doped
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