Room temperature magnetoelectric properties of [Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3]/Ni0.8Zn0.2Fe2O4 bilayer thin films deposited by laser ablation

2020 ◽  
Vol 256 ◽  
pp. 123692
Author(s):  
Jyoti Rani ◽  
Varun K. Kushwaha ◽  
Piyush K. Patel ◽  
C.V. Tomy
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Magnetoelectric Properties

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation

2005 ◽  
Vol 475-479 ◽  
pp. 1209-1212 ◽  
Author(s):  
Akihiko Ito ◽  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Room Temperature ◽  
High Vacuum ◽  
Amorphous Structure ◽  
Preparation Condition ◽  
Electrically Conductive

SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and PO2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and PO2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.

The oxygen deficiency effect of VO2 thin films prepared by laser ablation

1997 ◽  
Vol 12 (2) ◽  
pp. 416-422 ◽  
Author(s):  
M. Nagashima ◽  
H. Wada
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Vanadium Dioxide ◽  
Room Temperature ◽  
Oxygen Deficiency ◽  
Deposition Condition ◽  
Temperature Coefficient Of Resistance ◽  
Deposition Parameter ◽  
Vo2 Thin Films ◽  
Vanadium Dioxide Thin Films

Vanadium dioxide thin films (VO2) have been deposited by laser ablation. The temperature dependence of resistivity and temperature coefficient of resistance (TCR) for each deposition condition were investigated. It was clarified that the TCR at room temperature (RT) can be optimized by controlling the oxygen pressure introduced during deposition as the deposition parameter. In the result, larger TCR's at RT were observed for the oxygen deficient condition of VO2 than for oxygen-richer samples. Obtained TCR values were 0.072/K and 0.045/K at 25°C for VO2 thin films deposited onto R-cut sapphire and SiO2/Si, respectively.

Room-temperature deposition of nanocrystalline PbWO 4 thin films by pulsed laser ablation

2006 ◽  
Vol 84 (1-2) ◽  
pp. 181-185 ◽  
Author(s):  
J.H. Ryu ◽  
J.-W. Yoon ◽  
K.B. Shim ◽  
N. Koshizaki
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Temperature Deposition

Thin Films of Oxygen-Deficient Perovskite Superconductors by Laser Ablation

1987 ◽  
Vol 101 ◽  
Author(s):  
Joseph Bohandy ◽  
F. J. Adrian ◽  
K. Moorjani ◽  
W. J. Green ◽  
B. F. Kim
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Microwave Method ◽  
Bulk Materials ◽  
New Class ◽  
Spin Resonance ◽  
193 Nm ◽  
Electron Spin Resonance Spectrometer ◽  
Post Deposition

ABSTRACTThin films of the new class of high temperature superconducting perov-skites have been prepared by laser ablation of t,he bulk materials with a pulsed, excimer laser operating at 193 nm. The films were deposited on room temperature substrates without post-deposition processing. The existence of superconducting regions in the inhomogeneous films was established by a novel microwave method which uses a slightly modified electron spin resonance spectrometer.

Textured thin films grown at room temperature by laser ablation

2004 ◽  
Vol 79 (4-6) ◽  
pp. 919-921 ◽  
Author(s):  
T. García ◽  
E. de Posada ◽  
R. Diamant ◽  
J.L. Peña
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature

Room‐temperature luminescence from erbium‐doped silicon thin films prepared by laser ablation

1996 ◽  
Vol 69 (25) ◽  
pp. 3896-3898 ◽  
Author(s):  
Shuji Komuro ◽  
Shinya Maruyama ◽  
Takitaro Morikawa ◽  
Xinwei Zhao ◽  
Hideo Isshiki ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Silicon Thin Films ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Room Temperature Luminescence

Effect of Processing Conditions on the Microstructure and Electrical Resistance of Nanocrystalline ITO Thin Films Made by Laser Ablation

2006 ◽  
Vol 514-516 ◽  
pp. 1161-1165 ◽  
Author(s):  
Raluca Savu ◽  
Ednan Joanni
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Cross Sections ◽  
Indium Tin Oxide ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Deposition Pressure ◽  
Ito Thin Films ◽  
Made In

Nanocrystalline indium tin oxide (ITO) thin films were deposited on Si/SiO2 substrates by laser ablation from a ceramic target with a composition of 0.9 In2O3 . 0.1 SnO2. Samples were prepared in the pressure range from 10-1 to 5mbar, either in-situ at 500°C or at room temperature and heat-treated in air at 500°C. X-ray diffraction results show that the films are not oriented, except the ones made at high temperature which exhibit strong (400) orientation. AFM pictures show that the grains are round shaped and the sizes are in the range between 50 and 200nm, except for films made in-situ at 10-1mbar which are elongated and faceted. For higher pressures the grains tend to be small and to form agglomerates. The porosity of the films increases with the deposition pressure and the thicknesses reach a maximum of 2.8µm at 1mbar for the films made at room temperature and of 1.2µm at 2mbar for the ones made in-situ; for higher pressures the growth rate drop drastically, as revealed from SEM observations of cross-sections. The electrical resistance increases with the deposition pressure due to the increase in porosity, changing from 3.3k to 38.9M for films deposited at room temperature and from 20 to 265k for the ones made in-situ.

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