Thin Films of Oxygen-Deficient Perovskite Superconductors by Laser Ablation

1987 ◽  
Vol 101 ◽  
Author(s):  
Joseph Bohandy ◽  
F. J. Adrian ◽  
K. Moorjani ◽  
W. J. Green ◽  
B. F. Kim
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
Microwave Method ◽  
Bulk Materials ◽  
New Class ◽  
Spin Resonance ◽  
193 Nm ◽  
Electron Spin Resonance Spectrometer ◽  
Post Deposition

ABSTRACTThin films of the new class of high temperature superconducting perov-skites have been prepared by laser ablation of t,he bulk materials with a pulsed, excimer laser operating at 193 nm. The films were deposited on room temperature substrates without post-deposition processing. The existence of superconducting regions in the inhomogeneous films was established by a novel microwave method which uses a slightly modified electron spin resonance spectrometer.

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

scholarly journals A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure

2012 ◽  
Vol 25 (7) ◽  
pp. 1028-1032 ◽  
Author(s):  
Aiping Chen ◽  
Honghui Zhou ◽  
Zhenxing Bi ◽  
Yuanyuan Zhu ◽  
Zhiping Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
New Class

Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

2015 ◽  
Vol 3 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Sung Jin Park ◽  
Hyeon Mo Cho ◽  
Myong Euy Lee ◽  
Miyoung Kim ◽  
Kwenwoo Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Hybrid Materials ◽  
Hybrid Material ◽  
Silicon Thin Film ◽  
New Class ◽  
Silicon Thin Films ◽  
193 Nm

Silicon thin films that fulfil the needs of current semiconductor lithography were prepared from a new class of polycyclosilane–polysiloxane hybrid materials.

Early stages of the growth of BaTiO3 thin films studied by Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 706-707
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
Christopher Scarfone ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Room Temperature ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Cubic Phase ◽  
Transmission Electron ◽  
Tetragonal Form

Barium titanate (BaTiO3) may be used in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. In particular, the tetragonal form of BaTiO3, which is stable at room temperature, exhibits ferro-, pyro- and piezoelectric properties. It is desirable to form films of the tetragonal phase directly and thus to avoid formation of either amorphous or polycrystalline material or to form material of the non-ferroelectric cubic phase. Recently two techniques, pulsed-laser ablation and reactive evaporation, have been used to form BaTiO3 thin-films. In the present study BaTiO3 thin-films have been formed using the pulsed-laser ablation technique. Pulsed-laser ablation is now widely used to produce thin-films of the high temperature superconductors and has many advantages over other techniques, in particular the formation of films which maintain the stoichiometry of the target material and by controlling the processing conditions the formation of films having defined crystalline phases.

scholarly journals Temperature-Dependent Resistive Properties of Vanadium Pentoxide/Vanadium Multi-Layer Thin Films for Microbolometer & Antenna-Coupled Microbolometer Applications

Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1320 ◽  
Author(s):  
Mohamed Abdel-Rahman ◽  
Muhammad Zia ◽  
Mohammad Alduraibi
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Vanadium Pentoxide ◽  
Room Temperature ◽  
Temperature Dependent ◽  
Temperature Coefficients ◽  
Synthesis Technique ◽  
Annealing Conditions ◽  
Sputter Deposited ◽  
Post Deposition

In this study, vanadium oxide (VxOy) semiconducting resistive thermometer thin films were developed, and their temperature-dependent resistive behavior was examined. Multilayers of 5-nm-thick vanadium pentoxide (V2O5) and 5-nm-thick vanadium (V) films were alternately sputter-deposited, at room temperature, to form 105-nm-thick VxOy films, which were post-deposition annealed at 300 °C in O2 and N2 atmospheres for 30 and 40 min. The synthesized VxOy thin films were then patterned into resistive thermometer structures, and their resistance versus temperature (R-T) characteristics were measured. Samples annealed in O2 achieved temperature coefficients of resistance (TCRs) of −3.0036 and −2.4964%/K at resistivity values of 0.01477 and 0.00819 Ω·cm, respectively. Samples annealed in N2 achieved TCRs of −3.18 and −1.1181%/K at resistivity values of 0.04718 and 0.002527 Ω·cm, respectively. The developed thermometer thin films had TCR/resistivity properties suitable for microbolometer and antenna-coupled microbolometer applications. The employed multilayer synthesis technique was shown to be effective in tuning the TCR/resistivity properties of the thin films by varying the annealing conditions.

Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation

2005 ◽  
Vol 475-479 ◽  
pp. 1209-1212 ◽  
Author(s):  
Akihiko Ito ◽  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Room Temperature ◽  
High Vacuum ◽  
Amorphous Structure ◽  
Preparation Condition ◽  
Electrically Conductive

SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and PO2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and PO2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.

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