Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

2012 ◽  
Vol 47 (10) ◽  
pp. 3052-3055 ◽  
Author(s):  
Byung Kook Lee ◽  
Eunae Jung ◽  
Seok Hwan Kim ◽  
Dae Chul Moon ◽  
Sun Sook Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Chemical Properties ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Physical Chemical ◽  
Layer Deposition

High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

2019 ◽  
Vol 11 (16) ◽  
pp. 14892-14901 ◽  
Author(s):  
In-Hwan Baek ◽  
Jung Joon Pyeon ◽  
Seong Ho Han ◽  
Ga-Yeon Lee ◽  
Byung Joon Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Layer Deposition

scholarly journals Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (44) ◽  
pp. 25014-25020 ◽  
Author(s):  
So-Jung Yoon ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
Woong-Chul Shin ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
Bias Temperature Stress

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm).

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