Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

2017 ◽  
Vol 9 (27) ◽  
pp. 22676-22684 ◽  
Author(s):  
Sung-Min Yoon ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
Gi-Ho Seo ◽  
Woong-Chul Shin
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Active Channels

8.2: High Performance Oxide Thin Film Transistors Fabricated by Atomic Layer Deposition Process

2021 ◽  
Vol 52 (S2) ◽  
pp. 141-141
Author(s):  
Dedong Han ◽  
Huijin Li ◽  
Junchen Dong ◽  
Xiaobin Zhou ◽  
Qi Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
High Performance ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Layer Deposition

scholarly journals Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (44) ◽  
pp. 25014-25020 ◽  
Author(s):  
So-Jung Yoon ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
Woong-Chul Shin ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
Bias Temperature Stress

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm).

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