Microstructures and properties changes induced by a metal vapor vacuum arc chromium interlayer in chromium nitride films

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

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Influence of CuCr electrode composition on 2D electron and metal vapor density distribution over vacuum arc

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab83bd ◽

2020 ◽

Vol 53 (30) ◽

pp. 305201 ◽

Cited By ~ 1

Author(s):

Yuki Inada ◽

Ryo Kikuchi ◽

Hiroyuki Nagai ◽

Akiko Kumada ◽

Kunihiko Hidaka ◽

...

Keyword(s):

Density Distribution ◽

Metal Vapor ◽

Vacuum Arc ◽

Vapor Density ◽

Electrode Composition

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Research on transport properties of the metal vapor vacuum arc

2011 1st International Conference on Electric Power Equipment - Switching Technology ◽

10.1109/icepe-st.2011.6122943 ◽

2011 ◽

Author(s):

Xiaoming Liu ◽

Zhengbo Li ◽

Yundong Cao ◽

Jiyan Zou ◽

Xue Leng ◽

...

Keyword(s):

Transport Properties ◽

Metal Vapor ◽

Vacuum Arc

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Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

MRS Proceedings ◽

10.1557/proc-235-293 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 9

Author(s):

Kin Man Yu ◽

Ian G. Brown ◽

Seongil Im

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Lattice Mismatch ◽

Solid Phase ◽

Metal Vapor ◽

Ion Source ◽

Vacuum Arc ◽

High Dose ◽

Solid Phase Epitaxy ◽

Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

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