Research on transport properties of the metal vapor vacuum arc

2011 ◽  
Author(s):  
Xiaoming Liu ◽  
Zhengbo Li ◽  
Yundong Cao ◽  
Jiyan Zou ◽  
Xue Leng ◽  
...  
Keyword(s):  
Transport Properties ◽  
Metal Vapor ◽  
Vacuum Arc

Formation and Electrical Transport Properties of Nickel Silicide Synthesized by Metal Vapor Vacuum Arc Ion Implantation

2000 ◽  
Vol 611 ◽  
Author(s):  
X. W. Zhang ◽  
S. P. Wong ◽  
W. Y. Cheung ◽  
F. Zhang
Keyword(s):  
Ion Implantation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Metal Vapor ◽  
Nickel Silicide ◽  
Ion Source ◽  
Vacuum Arc ◽  
Band Model ◽  
Electrical Transport Properties ◽  
Nickel Ion

ABSTRACTNickel disilicide layers were prepared by nickel ion implantation into silicon substrates using a metal vapor vacuum arc ion source at various beam current densities to an ion dose of 6×1017 cm−2. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.

Structure and corrosion behavior of (Ti, Fe, C) films co-deposited by three metal vapor vacuum arc beams

2000 ◽  
Vol 128-129 ◽  
pp. 209-212 ◽  
Author(s):  
Hong Liang ◽  
Furong Ma ◽  
Xiaoyan Wang ◽  
Tonghe Zhang ◽  
Hong Zhu ◽  
...  
Keyword(s):  
Corrosion Behavior ◽  
Metal Vapor ◽  
Vacuum Arc

Performance of a high‐current metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current

Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

2002 ◽  
Vol 730 ◽  
Author(s):  
Shuangbao Wang ◽  
Hong Liang ◽  
Peiran Zhu
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Post Annealing ◽  
Strong Current ◽  
Xrd Patterns ◽  
Fe Ions

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

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