Nanocrystalline silicon fabrication by conventional plasma enhanced chemical vapor deposition for bottom gate thin film transistor

2010 ◽  
Vol 64 (18) ◽  
pp. 1975-1977 ◽  
Author(s):  
S.W. Kim ◽  
D.L. Choi
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Bottom Gate

Characteristics of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide and Thin-Film-Transistor Application

1992 ◽  
Vol 31 (Part 1, No. 12B) ◽  
pp. 4570-4573 ◽  
Author(s):  
Yutaka Nishi ◽  
Takashi Funai ◽  
Hideo Izawa ◽  
Takeo Fujimoto ◽  
Hiroshi Morimoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Chemical Vapor

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

2010 ◽  
Vol 97 (19) ◽  
pp. 192103 ◽  
Author(s):  
Te-Chih Chen ◽  
Ting-Chang Chang ◽  
Tien-Yu Hsieh ◽  
Chih-Tsung Tsai ◽  
Shih-Ching Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Passivation Layer
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