Improved UV photodetector performance of NiO films by substitutional incorporation of Li

2021 ◽  
pp. 130296
Author(s):  
P.V. Karthik Yadav ◽  
B. Ajitha ◽  
V. Annapureddy ◽  
Y. Ashok Kumar Reddy ◽  
Adem Sreedhar
Keyword(s):  
2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Geert R. Hoogeboom ◽  
Geert-Jan N. Sint Nicolaas ◽  
Andreas Alexander ◽  
Olga Kuschel ◽  
Joachim Wollschläger ◽  
...  
Keyword(s):  

2021 ◽  
Vol 118 (21) ◽  
pp. 211906
Author(s):  
Dan Zhang ◽  
Wanmin Lin ◽  
Zhuogeng Lin ◽  
Lemin Jia ◽  
Wei Zheng ◽  
...  
Keyword(s):  

2021 ◽  
Vol 278 ◽  
pp. 116830
Author(s):  
Hanan Alzahrani ◽  
Khaulah Sulaiman ◽  
Alaa Y. Mahmoud ◽  
Rabab R. Bahabry

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.


2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.


2019 ◽  
Vol 30 (12) ◽  
pp. 11327-11335 ◽  
Author(s):  
Ryan Kisslinger ◽  
Saralyn Riddell ◽  
Spencer Savela ◽  
Piyush Kar ◽  
Ujwal K. Thakur ◽  
...  
Keyword(s):  
P Type ◽  

2005 ◽  
Vol 109 (41) ◽  
pp. 19403-19410 ◽  
Author(s):  
Ana Morandeira ◽  
Gerrit Boschloo ◽  
Anders Hagfeldt ◽  
Leif Hammarström

Sensors ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 74 ◽  
Author(s):  
Sang-Won Lee ◽  
Seung-Hwan Cha ◽  
Kyung-Jae Choi ◽  
Byoung-Ho Kang ◽  
Jae-Sung Lee ◽  
...  

2008 ◽  
Vol 50 (11) ◽  
pp. 2863-2866 ◽  
Author(s):  
Ru-Yuan Yang ◽  
Chin-Min Hsiung ◽  
Hsuan-Hsu Chen ◽  
Hung-Wei Wu ◽  
Ming-Chang Shih

Sign in / Sign up

Export Citation Format

Share Document