Oxygen adsorption on wet-chemically cleaned GaN(0001) surface studied by coaxial impact collision ion scattering spectroscopy

2021 ◽  
pp. 130988
Author(s):  
Koji Abe
Keyword(s):  
Oxygen Adsorption ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Study of Diffusion and Defects by Medium-Energy Coaxial Impact-Collision Ion Scattering Spectroscopy

2000 ◽  
Vol 183-185 ◽  
pp. 207-214 ◽  
Author(s):  
Takayuki Kobayashi ◽  
C.F. McConville ◽  
J. Nakamura ◽  
G. Dorenbos ◽  
H. Sone ◽  
...  
Keyword(s):  
Medium Energy ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

2008 ◽  
Vol 23 (12) ◽  
pp. 3269-3272 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Tsuyoshi Ohnishi ◽  
Takeshi Ohgaki ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zno Films ◽  
Ion Scattering ◽  
Ceramic Target ◽  
Interfacial Phase ◽  
Sapphire Substrates ◽  
Zinc Oxide Films ◽  
Ion Scattering Spectroscopy ◽  
Doped Zno ◽  
Polarity Change

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (11¯20) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (000¯1) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.

Surface Characterization of GaN(0001) Grown by Liquid Phase Epitaxy Using Coaxial Impact-Collision Ion Scattering Spectroscopy

2008 ◽  
Vol 47 (9) ◽  
pp. 7281-7284 ◽  
Author(s):  
Hirofumi Suto ◽  
Shunjiro Fujii ◽  
Fumio Kawamura ◽  
Masashi Yoshimura ◽  
Yasuo Kitaoka ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Surface Characterization ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

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