Microstructural characterization of BN thin films using RF magnetron sputtering method

2020 ◽  
Vol 26 ◽  
pp. 2277-2282 ◽  
Author(s):  
Mukhtiar Singh ◽  
Hitesh Vasudev ◽  
Ravinder Kumar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering

Microstructural characterization of YBaCuO thin films deposited by rf magnetron sputtering as a function of annealing conditions

1991 ◽  
Vol 6 (2) ◽  
pp. 252-263 ◽  
Author(s):  
M. Ece ◽  
R.W. Vook ◽  
John P. Allen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Flash Evaporation ◽  
Annealing Conditions ◽  
Deposited Films

Thin films of Y1Ba2Cu3O7−x have been prepared on MgO, SrTiO3/Al2O3, and Al2O3 substrates by rf magnetron sputtering. A buffer layer of SrTiO3 was deposited on Al2O3 by flash evaporation. The as-deposited films on MgO and SrTiO

scholarly journals HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering

Materials ◽  
2017 ◽  
Vol 10 (2) ◽  
pp. 200 ◽  
Author(s):  
A. Faudoa-Arzate ◽  
A. Arteaga-Durán ◽  
R.J. Saenz-Hernández ◽  
M.E. Botello-Zubiate ◽  
P.R. Realyvazquez-Guevara ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Wo3 Thin Films ◽  
Reactive Rf Magnetron Sputtering

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

Characterization of Mo-AlNxOy Thin Films Deposited by RF Magnetron Sputtering

2017 ◽  
Vol s1 (1) ◽  
Author(s):  
Thyago Santos Braga ◽  
Marcos Massi ◽  
Argemiro Soares Silva Sobrinho ◽  
Fabio Dondeo Origo ◽  
Choyu Otani
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering
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