Microstructural characterization of YBaCuO thin films deposited by rf magnetron sputtering as a function of annealing conditions

1991 ◽  
Vol 6 (2) ◽  
pp. 252-263 ◽  
Author(s):  
M. Ece ◽  
R.W. Vook ◽  
John P. Allen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Flash Evaporation ◽  
Annealing Conditions ◽  
Deposited Films

Thin films of Y1Ba2Cu3O7−x have been prepared on MgO, SrTiO3/Al2O3, and Al2O3 substrates by rf magnetron sputtering. A buffer layer of SrTiO3 was deposited on Al2O3 by flash evaporation. The as-deposited films on MgO and SrTiO

Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films

2008 ◽  
Vol 1072 ◽  
Author(s):  
Tomas Wagner ◽  
Jan Gutwirth ◽  
Jiri Orava ◽  
Jan Prikryl ◽  
Petr Bezdicka ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Treatment ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
Rf Magnetron Sputtering ◽  
Deposition Condition ◽  
Sputtered Films ◽  
Target Composition ◽  
Deposited Films

ABSTRACTRF magnetron sputtering technique has been used to deposit new films potentially applicable in phase-change memories. Ge2Sb2Te5 seems to be promising material, but it is not clear whether it is optimum composition for such application. We studied different deposition condition and deposition of films doped by excess of Sb and doped also by Se, which equally replaces Te atoms compare to Ge2Sb2Te5. The sputtering target composition for our study was Ge2Sb2.3Te4Se1. Sputtered films contained less Se than target. Deposited films were characterized as-deposited and after thermal treatment in temperature range 30 − 300 °C.

scholarly journals HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering

Materials ◽  
2017 ◽  
Vol 10 (2) ◽  
pp. 200 ◽  
Author(s):  
A. Faudoa-Arzate ◽  
A. Arteaga-Durán ◽  
R.J. Saenz-Hernández ◽  
M.E. Botello-Zubiate ◽  
P.R. Realyvazquez-Guevara ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Wo3 Thin Films ◽  
Reactive Rf Magnetron Sputtering

Characterization of Rutile N-Doped TiO2 Films Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 543 ◽  
pp. 277-280
Author(s):  
Marius Dobromir ◽  
Alina Vasilica Manole ◽  
Simina Rebegea ◽  
Radu Apetrei ◽  
Maria Neagu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rutile Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

Characterization of Mo-AlNxOy Thin Films Deposited by RF Magnetron Sputtering

2017 ◽  
Vol s1 (1) ◽  
Author(s):  
Thyago Santos Braga ◽  
Marcos Massi ◽  
Argemiro Soares Silva Sobrinho ◽  
Fabio Dondeo Origo ◽  
Choyu Otani
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering
Sign in / Sign up

Export Citation Format

Share Document