Molecular dynamics simulation of the uniaxial tensile test of silicon nanowires using the MEAM potential

2019 ◽  
Vol 137 ◽  
pp. 103140 ◽  
Author(s):  
Wenting Xu ◽  
Woo Kyun Kim
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Tensile Test ◽  
Silicon Nanowires ◽  
Dynamics Simulation ◽  
Uniaxial Tensile ◽  
Uniaxial Tensile Test

Thermal Rectification in Silicon Nanowires With Mass Gradients

2008 ◽  
Author(s):  
Shuai-Chuang Wang ◽  
Xin-Gang Liang ◽  
Xiang-Hua Xu
Keyword(s):  
Molecular Dynamics ◽  
Heat Flux ◽  
Molecular Dynamics Simulation ◽  
Silicon Nanowires ◽  
Dynamics Simulation ◽  
Effect Of Temperature ◽  
Phonon Density ◽  
Phonon Density Of States ◽  
Thermal Rectification ◽  
Axial Mass

Thermal rectification as a new phenomenon is attracting great attention. Thermal rectification in silicon nanowires with axial mass gradient is investigated by molecular dynamics simulation. The results of the simulations show that the thermal conductivities are different for the heat flux with opposite directions. The rectification efficiency becomes larger when the mass gradient increases. The effect of temperature gradient on the thermal rectification is also considered. The phonon density of states is calculated to explain the phenomenon. It is found that the interface is responsible to the thermal rectification.

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