Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Al/SiO2/p-Si (MIS) Schottky diodes

2006 ◽  
Vol 83 (3) ◽  
pp. 582-588 ◽  
Author(s):  
A. Tataroğlu ◽  
Ş. Altındal
Keyword(s):  
Schottky Diodes ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Voltage Frequency

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 227-230
Author(s):  
Marco Naretto ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Current Theory ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Barrier Inhomogeneities

In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power applications. A comparison between different Schottky Barrier Height (SBH) evaluation methods (capacitance-voltage and current-voltage measurements), together with the comparison with other authors’ works, indicates that thermionic current theory is the dominant transport mechanism across the barrier from room temperature (RT) to 450K, while at T < 300K some anomalies in J-V curves appear and SBH and ideality factor significantly change their values. These deviations from ideality are attributed to Schottky barrier inhomogeneities. In particular, a model based on two SBHs seems appropriate to properly describe the electrical behavior of our devices.

Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes

2009 ◽  
Vol 156-158 ◽  
pp. 331-336 ◽  
Author(s):  
Jens Eriksson ◽  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Stefano Leone ◽  
...  
Keyword(s):  
Contact Area ◽  
Schottky Diodes ◽  
Electrical Current ◽  
Contact Radius ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage

The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.

Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

2019 ◽  
Vol 49 (3) ◽  
pp. 1993-2002
Author(s):  
Manuel A. Hernández-Ochoa ◽  
Humberto Arizpe-Chávez ◽  
Rafael Ramírez-Bon ◽  
Alain Pérez-Rodríguez ◽  
Manuel Cortez-Valadez ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Multilayer Films ◽  
Current Voltage

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Characterization of Nanocrystalline p-CuO/n-Si Hetrojunction Prepared by RF-Sputtering

2014 ◽  
Vol 1024 ◽  
pp. 120-123
Author(s):  
Nezar Gassem Elfadill ◽  
M. Roslan Hashim ◽  
Khaled M. Chahrour ◽  
Chun Sheng Wang
Keyword(s):  
Cupric Oxide ◽  
Pure Copper ◽  
Rf Sputtering ◽  
Saturation Current ◽  
Font Size ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Current Voltage ◽  
Capacitance Voltage

Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}Nanocrystalline cupric oxide (CuO) film was prepared by sputtering of pure copper metal on n-type single crystalline Si substrate under argon-oxygen ambient. Structural and morphological analyses of the as-deposited CuO films were performed by X-ray diffraction (XRD) diffractometer and Field Emission Scanning Electron Microscopy (FESEM). The results show Single crystalline granular nanocrystalline (002) CuO films, with 18 nm crystallite size. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed for p-CuO/n-Si hetrojunction. Diode parameters such as saturation current (Is=9.5E-6 A) and ideality factor (n=1.86) were extracted from the dark I-V characteristics. Potential barrier height of the junction (ϕi=1.1V) was revealed from (1/C2- V) plot. Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

scholarly journals Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Çetinkaya ◽  
H. A. Çetinkara ◽  
F. Bayansal ◽  
S. Kahraman
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Sem Images ◽  
Gel Method ◽  
Sol Gel Method ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cbd Method ◽  
Xrd Techniques

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

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