Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

2019 ◽  
Vol 49 (3) ◽  
pp. 1993-2002
Author(s):  
Manuel A. Hernández-Ochoa ◽  
Humberto Arizpe-Chávez ◽  
Rafael Ramírez-Bon ◽  
Alain Pérez-Rodríguez ◽  
Manuel Cortez-Valadez ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Multilayer Films ◽  
Current Voltage

scholarly journals Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Çetinkaya ◽  
H. A. Çetinkara ◽  
F. Bayansal ◽  
S. Kahraman
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Sem Images ◽  
Gel Method ◽  
Sol Gel Method ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cbd Method ◽  
Xrd Techniques

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. ConventionalI-Vand Norde’s methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

scholarly journals Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 967-970 ◽  
Author(s):  
Mitsutaka Nakamura ◽  
Yoshikazu Hashino ◽  
Tomoaki Furusho ◽  
Hiroyuki Kinoshita ◽  
Hiromu Shiomi ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Basal Plane ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Bias Current ◽  
Device Performance ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effects of basal-plane defects on the performance of 4H-SiC Schottky diodes using a Ni electrode are demonstrated. Systematic characterization was performed using 4H-SiC epitaxial layers grown by sublimation epitaxy on substrates with various off-axis angles. As the off-axis angle increases, the ideality factor of the current-voltage characteristics increases, and the Schottky barrier height decreases, corresponding to an increase in the number of basal-plane defects. The reverse-bias current degrades for high off-axis samples. These results indicate that basal-plane defects degrade the device performance. Schottky diodes that possesses good characteristics were obtained for samples with low off-axis angles (2o- and 4o-off samples).

Characterization of Nanostructured n-ZnO/p-Si Heterojunction Prepared by a Simple Sol–Gel Method

2016 ◽  
Vol 15 (04) ◽  
pp. 1650014 ◽  
Author(s):  
Bo He ◽  
Jing Xu ◽  
HuanPo Ning ◽  
Hao Xiong ◽  
HuaiZhong Xing ◽  
...  
Keyword(s):  
Sol Gel ◽  
Hall Effect Measurement ◽  
The Novel ◽  
Zno Film ◽  
Photoelectric Device ◽  
Gel Method ◽  
Sol Gel Method ◽  
Current Voltage ◽  
Heterojunction Device

The nanostructured ZnO film was prepared on a texturized Si wafer by a simple sol–gel method to fabricate n-ZnO/p-Si heterojunction photoelectric device. The novel sol–gel method is cheap and convenient. The structural, optical and electrical properties of the nanostructured ZnO film were studied by XRD, SEM, XPS, PL, UV–Vis spectrophotometer and Hall effect measurement. The current–voltage (I–V) curve of nanostructured ZnO/p-Si heterojunction device shows good rectifying behavior. Good photoelectric behavior is obtained.

scholarly journals Spectroscopic Characterization of Electrodeposited Poly(o-toluidine) Thin Films and Electrical Properties of ITO/Poly(o-toluidine)/Aluminum Schottky Diodes

2007 ◽  
Vol 2007 ◽  
pp. 1-7 ◽  
Author(s):  
A. Elmansouri ◽  
A. Outzourhit ◽  
A. Oueriagli ◽  
A. Lachkar ◽  
N. Hadik ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrochemical Polymerization ◽  
Schottky Diodes ◽  
Supporting Electrolyte ◽  
Spectroscopic Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Deposited Films ◽  
Ft Raman

Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. The electrosynthesized films were characterized by UV-Visible, FT-Raman, and FTIR spectroscopies. The optical transmissions of the as-deposited films were measured in the 400–900 nm wavelength range. These measurements showed that the optical band gap of the polymer films is in the order of 2.52 eV. The FT-Raman and FTIR measurements showed that the POT film is composed of imine and amine units. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The nonlinear current-voltage characteristics of these devices indicate a rectifying behavior. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The measured C-V and C-F characteristics are presented.

Current–voltage characterization of Au contact on sol–gel ZnO films with and without conducting polymer

2010 ◽  
Vol 256 (14) ◽  
pp. 4493-4496 ◽  
Author(s):  
Yow-Jon Lin ◽  
Mei-Jyuan Jheng ◽  
Jian-Jhou Zeng
Keyword(s):  
Conducting Polymer ◽  
Sol Gel ◽  
Zno Films ◽  
Current Voltage

scholarly journals Influence of Cubic Structured-ZnSnO3 Immersion Time to the Performance of Humidity Sensor

Nano Hybrids ◽  
2012 ◽  
Vol 2 ◽  
pp. 1-11 ◽  
Author(s):  
Nor Diyana Md Sin ◽  
Noor Khadijah ◽  
Mohamad Hafiz Mamat ◽  
Musa Mohamed Zaihidi ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Humidity Sensor ◽  
Deposition Time ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Immersion Method ◽  
Current Voltage ◽  
Humidity Chamber

ZnSnO3 thin film was deposited at different deposition time (0.5 h, 2 h, 4 h and 6 h) using sol-gel immersion method and the electrical, optical and structural properties of this film was investigated. This research involved the preparation of nanostructured ZnO thin film by using RF magnetron sputtering, preparation of ZnSnO3 sol-gel solution, metal contact deposition and characterization of humidity sensor. The thin film was characterized using current-voltage (I-V) measurement (Keithley 2400) and field emission scanning electron microscopy (FESEM) (JEOL JSM 6701F) for electrical and structural properties respectively. The sensor was characterized using I-V measurement in a humidity chamber (ESPEC SH-261) and the chamber has been set at room temperature with varied relative humidity (% RH), in the range of 40-90% RH. The film prepared with a deposition time of 2 h shows better sensitivity for humidity sensor. The FESEM investigation shows that crystal size increases with the increasing deposition time.

scholarly journals Electrical Characterization of Sol-Gel Derived TiO2Film on c-Si Substrate by Admittance Measurement

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Ayşe Evrim Saatci ◽  
Orhan Özdemir
Keyword(s):  
Crystalline Silicon ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Metal Electrode ◽  
Dip Coating ◽  
Current Voltage ◽  
Dta Analysis ◽  
Dip Coating Technique ◽  
And Storage

Transport and storage properties of sol-gel synthesized, namely, dip coating technique, titanium dioxide (TiO2) thin film over crystalline silicon (c-Si), has been investigated by means of current-voltage (I-V) and admittance analysis within different ambient. Considering the work function of anatase TiO2film, determined by both FTIR and TG/DTA analysis, silver (Ag) as front metal electrode was chosen to hinder a barrier for charge carriers. Electrical analysis implied that Ag/TiO2/c-Si structure was actually constituted by Ag/TiO2/native silicon dioxide (SiO2)/c-Si [SIS] structure, in which SiO2layer was identified by FTIR analysis. Consequently, the electrical features of the film were interpreted in terms of SIS diode that is capable of explaining C-V features.

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 227-230
Author(s):  
Marco Naretto ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Current Theory ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Barrier Inhomogeneities

In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power applications. A comparison between different Schottky Barrier Height (SBH) evaluation methods (capacitance-voltage and current-voltage measurements), together with the comparison with other authors’ works, indicates that thermionic current theory is the dominant transport mechanism across the barrier from room temperature (RT) to 450K, while at T < 300K some anomalies in J-V curves appear and SBH and ideality factor significantly change their values. These deviations from ideality are attributed to Schottky barrier inhomogeneities. In particular, a model based on two SBHs seems appropriate to properly describe the electrical behavior of our devices.

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