Characterization of Nanocrystalline p-CuO/n-Si Hetrojunction Prepared by RF-Sputtering

2014 ◽  
Vol 1024 ◽  
pp. 120-123
Author(s):  
Nezar Gassem Elfadill ◽  
M. Roslan Hashim ◽  
Khaled M. Chahrour ◽  
Chun Sheng Wang
Keyword(s):  
Cupric Oxide ◽  
Pure Copper ◽  
Rf Sputtering ◽  
Saturation Current ◽  
Font Size ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Current Voltage ◽  
Capacitance Voltage

Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}Nanocrystalline cupric oxide (CuO) film was prepared by sputtering of pure copper metal on n-type single crystalline Si substrate under argon-oxygen ambient. Structural and morphological analyses of the as-deposited CuO films were performed by X-ray diffraction (XRD) diffractometer and Field Emission Scanning Electron Microscopy (FESEM). The results show Single crystalline granular nanocrystalline (002) CuO films, with 18 nm crystallite size. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed for p-CuO/n-Si hetrojunction. Diode parameters such as saturation current (Is=9.5E-6 A) and ideality factor (n=1.86) were extracted from the dark I-V characteristics. Potential barrier height of the junction (ϕi=1.1V) was revealed from (1/C2- V) plot. Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

scholarly journals Preparation and Characterization of Ni(OH)2and NiO Mesoporous Nanosheets

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Changyu Li ◽  
Shouxin Liu
Keyword(s):  
Decomposition Method ◽  
Mixed Solution ◽  
X Ray Diffraction ◽  
Facile Hydrothermal Method ◽  
Sodium Dodecylbenzenesulfonate ◽  
Single Crystalline ◽  
X Ray ◽  
Thermal Decomposition Method ◽  
Transmission Electron

Mesoporous nanosheets of single-crystallineβ-nickel hydroxide (β-Ni(OH)2) were successfully synthesized via a facile hydrothermal method using Ni(NO3)2 · 6H2O as precursor in a mixed solution of sodium hydroxide (NaOH) and sodium dodecylbenzenesulfonate (SDBS). Single-crystalline nickel oxide (NiO) mesoporous nanosheets can be obtained through a thermal decomposition method usingβ-Ni(OH)2mesoporous nanosheets as precursor. The influences of SDBS and hydrothermal treatment were carefully investigated; the results showed that they played important roles in the formation ofβ-Ni(OH)2mesoporous nanosheets. The as-obtainedβ-Ni(OH)2and NiO were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermal gravity-differential thermal analysis (TG-DTA), and specific surface area, and pore size test.

scholarly journals Hydrothermal Synthesis and Characterization of Single-Crystalline -Fe2O3Nanocubes

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Wenqing Qin ◽  
Congren Yang ◽  
Ran Yi ◽  
Guanhua Gao
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Infrared Spectrometry ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Alkaline Agent ◽  
One Step

Single-crystalline - nanocubes were successfully obtained in large quantities through a facile one-step hydrothermal synthetic route under mild conditions. In this synthetic system, aqueous iron (III) nitrate () served as iron source and triethylamine served as precipitant and alkaline agent. By prolonging reaction time from 1 h to 24 h, the evolution process of -, from nanorhombohedra to nanohexahedron, and finally nanocube, was observed. The products were characterized by Powder X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), High-resolution Transmission Electron Microscopy (HRTEM), Selected-Area Electron Diffraction (SAED), and Fourier Transform Infrared Spectrometry (FTIR). The possible formation mechanism was discussed on basis of the experimental results.

scholarly journals Characterization of CuO thin films for gas sensing applications

2019 ◽  
Vol 14 (31) ◽  
pp. 1-12
Author(s):  
Jamal M. Rzaij
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Cupric Oxide ◽  
Laser Pulses ◽  
X Ray Diffraction ◽  
Energy Increase ◽  
Nano Structure ◽  
X Ray ◽  
Sensing Applications

Nanostructural cupric oxide (CuO) films were prepared on Si and glass substrate by pulsed laser deposition technique (PLD) using laser Nd:YAG, using different laser pulses energies from 200 to 600 mJ. The X-ray diffraction pattern (XRD) of the films showed a polycrystalline structure with a monoclinic symmetry and preferred orientation toward (111) plane with nano structure. The crystallite size was increasing with increasing of laser pulse energy. Optical properties was characterized by using UV–vis spectrometer in the wave lengthrange (200-1100) nm at room temperature. The results showed that the transmission spectrum decreases with the laser pulses energy increase. Sensitivity of NO2 gas at different operating temperatures, (50°C, 100°C, 150°C and 200°C) was calculated.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

scholarly journals Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2236
Author(s):  
Arántzazu Núñez-Cascajero ◽  
Fernando B. Naranjo ◽  
María de la Mata ◽  
Sergio I. Molina
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Layer ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

Characterization of CdZnO/Si heterojunction photodiode prepared by pulsed laser deposition

2018 ◽  
Vol 32 (31) ◽  
pp. 1850341 ◽  
Author(s):  
Jehan A. Saimon ◽  
Suzan N. Madhat ◽  
Khawla S. Khashan ◽  
Azhar I. Hassan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Measurement ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Increase Doping Concentration ◽  
Si Substrates ◽  
Current Voltage ◽  
Zno Crystal

The Cd[Formula: see text]Zn[Formula: see text]O thin films have been deposited on glass and Si substrates at room-temperature with different Cd contents (x = 0, 2%, 4% and 6 wt.%) by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analyses evidenced that the films possess polycrystalline and a hexagonal ZnO crystal structure for x = 0, 2% and 4% with a preferred orientation in the a-axis (101) direction, while films with a mixed hexagonal and cubic structure was revealed for x = 6 wt.%. Electrical measurement presented that the resistivity decreased with increased temperature and concentration of Cd. The deliberated activation energy was reduced was from 0.224 to 0.113 eV with increase doping concentration. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the fabricated Cd[Formula: see text]Zn[Formula: see text]O/p-Si heterojunction varied with the applied bias and the Cd concentration. The results of the values of built-in potential (V[Formula: see text]) and the ideality factor (n) increased with raising Cd concentration.

scholarly journals Properties of Cu(In,Ga) Thin Films and Solar Cells Deposited by Hybrid Process

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
S. Marsillac ◽  
H. Khatri ◽  
K. Aryal ◽  
R.W. Collins
Keyword(s):  
Solar Cells ◽  
Critical Points ◽  
Hybrid Process ◽  
Angle Of Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
High Series ◽  
Uniform Composition

Cu(In,Ga)Se2solar cells were fabricated using a hybrid cosputtering/evaporation process, and efficiencies as high as 12.4% were achieved. The films were characterized by energy-dispersive X-ray spectroscopy, glancing incidence X-ray diffraction, scanning electron microscopy, auger electron spectroscopy, and transmittance and reflectance spectroscopy, and their properties were compared to the ones of films deposited by coevaporation. Even though the films were relatively similar, the ones deposited by the hybrid process tend to have smaller grains with a slightly preferred orientation along the (112) axis and a rougher surface. Both types of films have uniform composition through the depth. Characterization of these films by variable angle of incidence spectroscopic ellipsometry allowed for the calculation of the position of the critical points, via calculation of the second derivative of the dielectric function and fit with critical points parabolic band oscillators. The solar cells were then characterized by current-voltage and quantum efficiency measurements. An analysis of the diode parameters indicates that the cells are mostly limited by a low fill factor, associated mostly with a high diode quality factor () and high series resistance ( ) .

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

2014 ◽  
Vol 806 ◽  
pp. 143-147
Author(s):  
P. Fiorenza ◽  
Marilena Vivona ◽  
L.K. Swanson ◽  
Filippo Giannazzo ◽  
C. Bongiorno ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cross Sectional ◽  
Direct Demonstration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
N Incorporation ◽  
The Impact ◽  
Post Deposition ◽  
Partial Compensation

In this paper a comparative study of the impact of N2O and POCl3 annealing on the SiO2/SiC system is presented, combining nanoscale electrical characterization of SiC surface doping by scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) to the conventional capacitance-voltage (C-V) and current-voltage (I-V) measurements on MOS-based devices. A significant reduction of the interface states density (from 1.8×1012 to 5.7×1011 cm-2eV-1) and, correspondingly, an increase in the carrier mobility (from 19 to 108 cm2V-1s-1) was found moving from N2O to POCl3 annealing. Furthermore, SSRM measurements on bare p+-type SiC regions selectively exposed to N2O and POCl3 at high temperature provided the direct demonstration of the incorporation of N or P-related donors in the SiC surface, leading to a partial compensation of substrate acceptors during N2O treatment and to an overcompensation during POCl3 annealing. Finally, cross-sectional SCM profiles performed on epitaxial n-doped 4H-SiC with 45 nm SiO2 (subjected to post deposition annealing in the two ambients) allowed to quantify the active donors concentrations associated to P or N incorporation under the gate oxide, showing almost a factor of ten higher doping (4.5×1018cm-3 vs 5×1017cm-3) in the case of P related donors.

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