Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

2013 ◽  
Vol 109 ◽  
pp. 64-67 ◽  
Author(s):  
Chen-Chien Li ◽  
Kuei-Shu Chang-Liao ◽  
Chung-Hao Fu ◽  
Tsung-Lin Hsieh ◽  
Li-Ting Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Remote Plasma ◽  
Mos Devices ◽  
Layer Deposition ◽  
High K

Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment

2012 ◽  
Vol 93 ◽  
pp. 15-18 ◽  
Author(s):  
Dawei Xu ◽  
Xinhong Cheng ◽  
Youwei Zhang ◽  
Zhongjian Wang ◽  
Chao Xia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Atomic Layer ◽  
Layer Deposition

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

2011 ◽  
Vol 99 (4) ◽  
pp. 042904 ◽  
Author(s):  
M. Milojevic ◽  
R. Contreras-Guerrero ◽  
E. O’Connor ◽  
B. Brennan ◽  
P. K. Hurley ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
In Situ Characterization ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

Rapid thermal processing of hafnium dioxide thin films by remote plasma atomic layer deposition as high-k dielectrics

2018 ◽  
Vol 660 ◽  
pp. 797-801 ◽  
Author(s):  
Xiao-Ying Zhang ◽  
Chia-Hsun Hsu ◽  
Yun-Shao Cho ◽  
Sam Zhang ◽  
Shui-Yang Lien ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Remote Plasma ◽  
Layer Deposition ◽  
High K
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