A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
2015 ◽
Vol 147
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pp. 277-280
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Keyword(s):
2011 ◽
Vol 14
(5)
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pp. G27
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2009 ◽
Vol 48
(4)
◽
pp. 04C009
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