WITHDRAWN: Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions

2020 ◽  
pp. 111348
Author(s):  
J.D. Akrofi ◽  
M. Ebert ◽  
J.D. Reynolds ◽  
K. Sun ◽  
R. Hu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Ionic Solutions ◽  
Voltage Drift

scholarly journals Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions

2020 ◽  
Vol 9 ◽  
pp. 100072
Author(s):  
J.D. Akrofi ◽  
M. Ebert ◽  
J.D. Reynolds ◽  
K. Sun ◽  
R. Hu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Ionic Solutions ◽  
Voltage Drift

scholarly journals Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutions

2020 ◽  
Vol 8 ◽  
pp. 100066
Author(s):  
J.D. Akrofi ◽  
M. Ebert ◽  
J.D. Reynolds ◽  
K. Sun ◽  
R. Hu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Ionic Solutions ◽  
Voltage Drift

Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement

2019 ◽  
Vol 954 ◽  
pp. 133-138
Author(s):  
Ao Liu ◽  
Song Bai ◽  
Run Hua Huang ◽  
Tong Tong Yang ◽  
Hao Liu
Keyword(s):  
Threshold Voltage ◽  
Precision Measurement ◽  
Gate Dielectric ◽  
Interface Traps ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Experimental Platform ◽  
Bias Stress ◽  
Voltage Instability ◽  
Voltage Drift

The mechanism of threshold voltage shift was studied. It is believed that the instability in threshold voltage during gate bias stress is due to capture of electrons by the SiC/gate dielectric interface traps and the gate dielectric near interface traps. New experimental platform was designed and built successfully. When positive stress or negative stress is applied to the gate, the change of threshold voltage occur immediately. After stress removal, the recovery of the threshold voltage occur soon. The change and recovery of threshold voltage are very sensitive to time. In order to get accurate threshold voltage drift data after high-temperature gate bias experiment, test of threshold voltage must be carried out immediately after the experiment.

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

2015 ◽  
Vol 54 (4) ◽  
pp. 044101 ◽  
Author(s):  
Fei Sang ◽  
Maojun Wang ◽  
Chuan Zhang ◽  
Ming Tao ◽  
Bing Xie ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Bias ◽  
Bias Stress ◽  
Enhancement Mode ◽  
Voltage Drift ◽  
Gate Bias Stress

Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique

2016 ◽  
Vol 9 (9) ◽  
pp. 091001 ◽  
Author(s):  
Fei Sang ◽  
Maojun Wang ◽  
Ming Tao ◽  
Shaofei Liu ◽  
Min Yu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Time Dependent ◽  
Interface Traps ◽  
Voltage Drift ◽  
Gate Recess

Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET

2020 ◽  
Vol 41 (9) ◽  
pp. 1284-1287 ◽  
Author(s):  
Huaping Jiang ◽  
Xiaohan Zhong ◽  
Guanqun Qiu ◽  
Lei Tang ◽  
Xiaowei Qi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Threshold Voltage ◽  
Voltage Drift
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