A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

2008 4th International Conference on Wireless Communications, Networking and Mobile Computing ◽

10.1109/wicom.2008.460 ◽

2008 ◽

Author(s):

Xiu-Long Wu ◽

Jun-Ning Chen ◽

Dao-Ming Ke

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Threshold Voltage Model

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Two-Dimensional Analytical Threshold Voltage Model of Nanoscale Fully Depleted SOI MOSFET With Electrically Induced S/D Extensions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2005.850624 ◽

2005 ◽

Vol 52 (7) ◽

pp. 1568-1575 ◽

Author(s):

M.J. Kumar ◽

A.A. Orouji

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Threshold Voltage Model

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A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2006.05.016 ◽

2007 ◽

Vol 47 (2-3) ◽

pp. 379-383 ◽

Author(s):

T.K. Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635330 ◽

2006 ◽

Author(s):

T.K. Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A compact, analytical two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/20/12/005 ◽

2005 ◽

Vol 20 (12) ◽

pp. 1173-1178 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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Two Dimensional Analytical Threshold Voltage Model of Nanoscale Strained Si/Si1–x Gex MOSFETs Including Quantum Mechanical Effects

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2012.2044 ◽

2012 ◽

Vol 9 (3) ◽

pp. 441-447

Author(s):

Kang Eng Siew ◽

Yau Wei Heong ◽

Sohail Anwar ◽

Razali Ismail

Keyword(s):

Threshold Voltage ◽

Quantum Mechanical ◽

Two Dimensional ◽

Strained Si ◽

Mechanical Effects ◽

Quantum Mechanical Effects ◽

Threshold Voltage Model

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A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.5438 ◽

2016 ◽

Vol 13 (8) ◽

pp. 5454-5457

Author(s):

Hao Zhao-Ming ◽

Li Yu-Chen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Semiconductor Device ◽

Double Gate ◽

Two Dimensional ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Effect Transistor ◽

Threshold Voltage Model

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A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects

Solid-State Electronics ◽

10.1016/j.sse.2014.03.004 ◽

2014 ◽

Vol 95 ◽

pp. 52-60 ◽

Author(s):

Ajit Kumar ◽

Pramod Kumar Tiwari

Keyword(s):

Surface Potential ◽

Threshold Voltage ◽

Short Channel ◽

Fully Depleted ◽

Threshold Voltage Model

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A simple 2D analytical threshold voltage model for fully depleted short-channel silicon-on-insulator MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/19/12/012 ◽

2004 ◽

Vol 19 (12) ◽

pp. 1397-1405 ◽

Author(s):

Kow-Ming Chang ◽

Han-Pang Wang

Keyword(s):

Threshold Voltage ◽

Silicon On Insulator ◽

Short Channel ◽

Fully Depleted ◽

Threshold Voltage Model

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A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric

Chinese Physics B ◽

10.1088/1674-1056/24/10/108505 ◽

2015 ◽

Vol 24 (10) ◽

pp. 108505 ◽

Author(s):

Gopi Krishna Saramekala ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Fully Depleted ◽

High K ◽

High K Dielectric ◽

Threshold Voltage Model

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Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2008.12.001 ◽

2009 ◽

Vol 53 (3) ◽

pp. 256-265 ◽

Author(s):

Rathnamala Rao ◽

Guruprasad Katti ◽

Dnyanesh S. Havaldar ◽

Nandita DasGupta ◽

Amitava DasGupta

Keyword(s):

Threshold Voltage ◽

Silicon On Insulator ◽

Fully Depleted ◽

Threshold Voltage Model

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