Quantitative analysis of void initiation in thermo-mechanical fatigue of polycrystalline copper films

2021 ◽  
Vol 127 ◽  
pp. 114387
Author(s):  
Manuel Kleinbichler ◽  
Corinna Kofler ◽  
Manuel Stabentheiner ◽  
Michael Reisinger ◽  
Sebastian Moser ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Copper Films ◽  
Polycrystalline Copper ◽  
Mechanical Fatigue ◽  
Void Initiation

Effect of lead on the thermal dispersion of continuous polycrystalline copper films

Vacuum ◽  
2017 ◽  
Vol 142 ◽  
pp. 29-36 ◽  
Author(s):  
S.I. Petrushenko ◽  
S.V. Dukarov ◽  
V.N. Sukhov
Keyword(s):  
Copper Films ◽  
Polycrystalline Copper ◽  
Thermal Dispersion

NUCLEATION AND GROWTH OF Cu/Ni(100): A VARIABLE TEMPERATURE STM STUDY

1997 ◽  
Vol 04 (06) ◽  
pp. 1161-1165 ◽  
Author(s):  
B. MÜLLER ◽  
L. NEDELMANN ◽  
B. FISCHER ◽  
H. BRUNE ◽  
K. KERN
Keyword(s):  
Quantitative Analysis ◽  
Bond Energy ◽  
Critical Nucleus ◽  
Variable Temperature ◽  
Multilayer Films ◽  
Nucleation And Growth ◽  
Copper Films ◽  
Physical Reasons ◽  
Critical Nuclei ◽  
Island Density

A detailed study of the nucleation and growth of Cu on Ni(100) as a function of substrate temperature and deposition rate by variable temperature STM is reported. By the quantitative analysis of the saturation island density as a function of temperature and flux for submonolayer coverages, we have deduced the migration barrier (0.35 eV), the dimer bond energy (0.46 eV) as well the sizes of the the critical nuclei. Because the dimer bond energy is large with respect to the migration barrier, a well-defined transition from a critical nucleus of 1 to 3 has been observed, as expected from the adsorption site geometry on square lattices. The large dimer bond energy of Cu on Ni(100) is one of the physical reasons for the recently uncovered strain relief mechanism via internal {111} faceting. The substantially increased island density on mono- and bilayer copper films on Ni(100) with respect to multilayer films might also be attributed to the enhanced lateral bonding.

Room-Temperature UHV-Deposited Titanium Monoxide Films on Oxidized Polycrystalline Copper

2001 ◽  
Vol 672 ◽  
Author(s):  
V. M. Fuenzalida ◽  
C. R. Grahmann ◽  
C. Herrera ◽  
R. A. Zárate ◽  
C. Avila ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Copper Substrate ◽  
Copper Film ◽  
Copper Surface ◽  
Native Oxide ◽  
Titanium Monoxide ◽  
Copper Films ◽  
Polycrystalline Copper ◽  
Tungsten Boat

ABSTRACTPolycrystalline copper films thicker than 100 nm were evaporated on silicon wafers with their native oxide under ultrahigh vacuum conditions leading to an rms roughness of ~2 nm of the copper film. X-ray photoelectron spectroscopy (XPS) revealed a clean copper surface with only traces of oxygen. The samples were exposed to air, leading to an oxide film consisting of CuO. TiO films were subsequently deposited onto the oxidized copper films from a resistively heated tungsten boat with the substrate at room temperature. The TiO films exhibited good adherence and were amorphous. XPS measurements revealed that the TiO films were contamination-free and that the first layers of TiO reduced the thin native oxide of the copper substrate from Cu(II) into Cu(I) or Cu(0) and transformed the TiO into TiO2 at the interface.

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