Thermodynamics of cis,cis-muconic acid solubility in various polar solvents at low temperature range

2016 ◽  
Vol 222 ◽  
pp. 823-827 ◽  
Author(s):  
S. Scelfo ◽  
R. Pirone ◽  
N. Russo
2003 ◽  
Vol 17 (27n28) ◽  
pp. 1453-1460
Author(s):  
ILEANA LUPSA

The magnetic properties of U 1-x Dy x Al y Ni 5-y (y=0,1) systems were investigated in the 2(5)–600 K temperature range and for fields up to 80 kOe. The systems having x≥0.2 are magnetically ordered with low transition temperatures and magnetization mainly due to the Dy contribution. The nickel exhibits magnetic moments, very weak in the low temperature range and well-defined effective moments over transition temperatures. The nickel behavior is discussed in terms of the spin fluctuation model.


2014 ◽  
Vol 39 (22) ◽  
pp. 11501-11508 ◽  
Author(s):  
Federico Cova ◽  
Fabiana Gennari ◽  
Pierre Arneodo Larochette

1995 ◽  
Vol 06 (02) ◽  
pp. 317-373 ◽  
Author(s):  
G. GILDENBLAT ◽  
D. FOTY

We review the modeling of silicon MOS devices in the 10–300 K temperature range with an emphasis on the specifics of low-temperature operation. Recently developed one-dimensional models of long-channel transistors are discussed in connection with experimental determination and verification of the effective channel mobility in a wide temperature range. We also present analytical pseudo-two-dimensional models of short-channel devices which have been proposed for potential use in circuit simulators. Several one-, two-, and three-dimensional numerical models are discussed in order to gain insight into the more subtle details of the low-temperature device physics of MOS transistors and capacitors. Particular attention is paid to freezeout effects which, depending on the device design and the ambient temperature range, may or may not be important for actual device operation. The numerical models are applied to study the characteristic time scale of freezeout transients in the space-charge regions of silicon devices, to the analysis and suppression of delayed turn-off in MOS transistors with compensated channel, and to the temperature dependence of three-dimensional effects in short-channel, narrow-channel MOSFETs.


Author(s):  
E.A. Eliseev ◽  
◽  
G.S. Sevalnev ◽  
A.V. Doroshenko ◽  
M.E. Druzhinina ◽  
...  

Low-temperature nitriding of steels is usually carried out in the temperature range of development of reversible temper brittleness. The holding time at these temperatures significantly exceeds the holding time during normal tempering, which can negatively affect the properties of steel. The article considers theories that explain the processes occurring in steels in the temper brittleness temperature range. It may be concluded that views linking the embrittlement of steel with alloying elements such as nickel in its content are not confirmed by the experiments; at the same time ideas based on classical views about the diffusion of chemical elements explain the processes in steel better.


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