scholarly journals AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD

2013 ◽  
Vol 15 (3) ◽  
pp. 259
Author(s):  
R. Beisenov ◽  
R. Ebrahim ◽  
A. Zommorodian ◽  
Z.A. Mansurov ◽  
S.Zh. Tokmoldin ◽  
...  
Keyword(s):  
Depth Profile ◽  
Ion Beam ◽  
High Vacuum ◽  
Stoichiometric Composition ◽  
Surface Cleaning ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Beam Sputtering ◽  
Auger Spectra ◽  
Sic Films

<p>Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function of depth of 2 micron thick SiC films. AES measurements were performed under very high vacuum 10<sup>-9</sup> Torr conditions. Surface cleaning and depth profile studies were carried out by using Ar<sup>+</sup> ion beam sputtering. Auger spectra of the surface indicate Si LVV, C KLL and O KLL peaks. The Si LVV signals on the as prepared’ surfaces for both substrates indicated that the silicon was in the oxide state, which was removed after 15 min Ar+ ion cleaning. Depth profile studies showed, that after 20 min of ion cleaning the SiC films possess near stoichiometric composition. Moreover, the C KLL signal on the ion cleaned films showed the carbon in the carbide state. X-ray diffraction analysis of the SiC films on the sapphire (0001) and Si(100) substrates has shown a high intensity single peaks at 35.7°, which indicates the presence of SiC at orientation (111).</p>

Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

2007 ◽  
Vol 556-557 ◽  
pp. 713-716 ◽  
Author(s):  
Yu Cao ◽  
S. Alfonso Pérez-García ◽  
Lars Nyborg
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Beam Sputtering ◽  
Sic Wafer

This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

Aluminum nitride films synthesized by dual ion beam sputtering

2004 ◽  
Vol 19 (12) ◽  
pp. 3521-3525 ◽  
Author(s):  
Sheng Han ◽  
Hong-Ying Chen ◽  
Chih-Hsuan Cheng ◽  
Jian-Hong Lin ◽  
Han C. Shih
Keyword(s):  
Crystal Structure ◽  
Aluminum Nitride ◽  
Ion Beam ◽  
Diffraction Field ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Beam Voltage ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Aluminum nitride films were deposited by varying the voltages of argon ion beams from 400 to 1200 V in dual ion beam sputtering. The crystal structure, microstructure, and elemental distributions of the aluminum nitride films were analyzed by x-ray diffraction, field emission scanning electron microscopy, and secondary ion mass spectroscopy, respectively. The aluminum nitride films exhibited the 〈002〉 preferred orientation at an optimal ion beam voltage of 800 V. The orientation changed to a mixture of {100} and {002} planes above 800 V, accounting for radiation damage. The thickness of the film increases with increasing ion beam voltage, reaching a steady state value of 210 nm at an ion beam voltage of 1200 V. Under optimal condition (800 V), the c-axis orientation of the aluminum nitride 〈002〉 film was obtained with a dense and high-quality crystal structure.

The Structure of Si and Ge Deposited by Ion Beam Sputtering

1985 ◽  
Vol 47 ◽  
Author(s):  
H. Windischmann ◽  
J. M. Cavese ◽  
R. W. Collins ◽  
R. D. Harris ◽  
J. Gonzalez-Hernandez
Keyword(s):  
Crystallization Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Operating Pressure ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Oxygen Contamination ◽  
Beam Sputtering ◽  
Silicon And Germanium ◽  
Substrate Temperatures

ABSTRACTThe crystallinity for silicon and germanium films deposited by ion beam sputtering (IBS) as a function of substrate temperatures was determined using Raman spectroscopy, spectroscopic ellipsometry, electrical conductivity and x-ray diffraction measurements. The results show that IBS silicon crystallizes between 300–350°C while germanium crystallizes between 20–200°C. Reasonably good agreement is obtained among the four distinctively different characterization techniques in identifying the onset of crystallinity. A direct relationship is observed between the substrate temperature required for crystallization and the log of the operating pressure for various deposition techniques. Energetic particle stimulation during film growth appears to reduce the crystallization temperature at a given operating pressure. Raman data show that the crystallization temperature depends on the deposition rate. A graded structure is observed in films deposited above 300°C, probably due to oxygen contamination.

The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

1986 ◽  
Vol 74 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
D. C. Jacobson
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Mixing Distance ◽  
Diffraction Peaks ◽  
Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

Characterizations of Co/Al2O3/Co/NiFe multilayers elaborated by ultra-high vacuum ion beam sputtering

2005 ◽  
Vol 25 (5-8) ◽  
pp. 752-755 ◽  
Author(s):  
E.H. Oubensaid ◽  
C. Maunoury ◽  
T. Devolder ◽  
N. Marsot ◽  
C. Schwebel
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

1994 ◽  
Vol 337 ◽  
Author(s):  
K.G. Grigorov ◽  
A.H. Benhocine ◽  
D. Bouchier ◽  
F. Meyer
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Lattice Parameter ◽  
Ultra High Vacuum ◽  
Titanium Monoxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cubic Structure ◽  
Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

Contamination Effects in Mo/Ni Superlattices

1991 ◽  
Vol 229 ◽  
Author(s):  
Steven M. Hues ◽  
John L. Makous
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Bilayer Thickness ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Impurity Incorporation ◽  
X Ray ◽  
Beam Sputtering ◽  
Deposited Films

AbstractA softening of the shear elastic constant c44 has been observed previously in Mo/Ni superlattices as a function of decreasing bilayer thickness below approximately 100 Å.[1] We have prepared a series of Mo/Ni superlattice films by ion beam sputtering doped with varying concentrations of either aluminum or oxygen. The chemical and structural properties of these films were then determined using x-ray diffraction (XRD) and Auger electron spectroscopy (AES). The shear elastic properties were characterized by measuring the surface acoustic wave (SAW) velocity of the deposited films. We demonstrate structural and elastic property effects resulting from Al and O impurity incorporation in Mo/Ni multilayers.

In-Plane Magnetic and Structural Anisotropies in NI and FE Films Produced by Ion-Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
W. A. Lewis ◽  
M. Farle ◽  
B. M. Clemens ◽  
R. L. White
Keyword(s):  
Ion Beam ◽  
Anisotropy Field ◽  
Angle Of Incidence ◽  
Induced Anisotropy ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Beam Sputtering

ABSTRACTWe report the results of our microstructural investigations into the origin of in-plane uniaxial magnetic anisotropies induced in Ni and Fe thin films by low energy ion beam assisted deposition. 1000 Å films were prepared by ion beam sputtering onto amorphous silica substrates under simultaneous bombardment by 100 eV Xe+ ions under an oblique angle of incidence. The induced anisotropy is studied as a function of ion-to-adsorbate atom arrival ratio, R, from values of 0 to 0.35. The maximum anisotropy field is 150 Oe for Ni and 80 Oe for Fe, but their hard axes are oriented orthogonal to each other. Asymmetric x-ray diffraction is employed to study both in-plane and out-of-plane lattice spacings and crystallographic orientation. In agreement with previous work, we find evidence of a anisotropic in-plane strain of magnitude 0.2-0.5%. In all films, the direction perpendicular to the ion bombardment is compressed relative to parallel. The uniaxial magnetic anisotropy is correlated with this in-plane anisotropic strain using a simple magnetoelastic model.

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