Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.11.007 ◽

2013 ◽

Vol 16 (5) ◽

pp. 1240-1247 ◽

Author(s):

Zahra Arefinia

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Silicon On Insulator ◽

Double Gate ◽

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation

Journal of Physics Conference Series ◽

10.1088/1742-6596/38/1/046 ◽

2006 ◽

Vol 38 ◽

pp. 192-195 ◽

Author(s):

A Martinez ◽

J R Barker ◽

A Svizhenko ◽

M P Anantram ◽

A R Brown ◽

...

Keyword(s):

Quantum Simulation ◽

Thin Body ◽

Double Gate ◽

Double Gate Mosfet ◽

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Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418485 ◽

2008 ◽

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Double Gate ◽

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Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p–i–n tunneling FETs

Journal of Semiconductors ◽

10.1088/1674-4926/35/6/064006 ◽

2014 ◽

Vol 35 (6) ◽

pp. 064006 ◽

Author(s):

Wei Wang ◽

Gongshu Yue ◽

Xiao Yang ◽

Lu Zhang ◽

Ting Zhang

Keyword(s):

Simulation Study ◽

Gate Dielectric ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

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A full-quantum simulation study of InGaAs NW MOSFETs including interface traps

2016 46th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2016.7599616 ◽

2016 ◽

Author(s):

Michele Visciarelli ◽

Antonio Gnudi ◽

Elena Gnani ◽

Susanna Reggiani

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Interface Traps ◽

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Resonant gate tunneling current in double-gate SOI: a simulation study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.920126 ◽

2003 ◽

Vol 50 (12) ◽

pp. 2579-2581 ◽

Author(s):

Chang-Hoon Choi ◽

Zhiping Yu ◽

R.W. Dutton

Keyword(s):

Simulation Study ◽

Tunneling Current ◽

Double Gate ◽

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Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.09.019 ◽

2013 ◽

Vol 16 (2) ◽

pp. 311-317 ◽

Author(s):

Morteza Charmi ◽

Ali A. Orouji ◽

Hamid R. Mashayekhi

Keyword(s):

Quantum Simulation ◽

Doping Profile ◽

Double Gate ◽

Design Considerations

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MONOLAYER CHARGED QUANTUM FILMS: A QUANTUM SIMULATION STUDY

Recent Progress in Many-Body Theories ◽

10.1142/9789812772893_0013 ◽

2006 ◽

Author(s):

KEOLA WIERSCHEM ◽

EFSTRATIOS MANOUSAKIS

Keyword(s):

Simulation Study ◽

Quantum Simulation

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Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373671 ◽

2007 ◽

Author(s):

Yijian Ouyang ◽

Jing Guo

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Quantum Simulation ◽

Carbon Nanotube Fets

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Performance Evaluation and Design Considerations of Electrically Activated Drain Extension Tunneling GNRFET: A Quantum Simulation Study

Journal of Electronic Materials ◽

10.1007/s11664-017-5686-3 ◽

2017 ◽

Vol 46 (11) ◽

pp. 6508-6517 ◽

Author(s):

Seyed Saleh Ghoreishi ◽

Reza Yousefi ◽

Neda Taghavi

Keyword(s):

Performance Evaluation ◽

Simulation Study ◽

Quantum Simulation ◽

Design Considerations

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