Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p–i–n tunneling FETs

Journal of Semiconductors ◽

10.1088/1674-4926/35/6/064006 ◽

2014 ◽

Vol 35 (6) ◽

pp. 064006 ◽

Author(s):

Wei Wang ◽

Gongshu Yue ◽

Xiao Yang ◽

Lu Zhang ◽

Ting Zhang

Keyword(s):

Simulation Study ◽

Gate Dielectric ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis

IEEE Sensors Journal ◽

10.1109/jsen.2016.2550492 ◽

2016 ◽

Vol 16 (11) ◽

pp. 4180-4191 ◽

Author(s):

Khalil Tamersit ◽

Faycal Djeffal

Keyword(s):

Sensitivity Analysis ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gas Sensing ◽

Graphene Nanoribbon ◽

Double Gate ◽

Sensing Applications ◽

Effect Transistor

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Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.902692 ◽

2007 ◽

Vol 54 (9) ◽

pp. 2223-2231 ◽

Author(s):

Yijian Ouyang ◽

Youngki Yoon ◽

Jing Guo

Keyword(s):

Simulation Study ◽

Three Dimensional ◽

Quantum Simulation ◽

Graphene Nanoribbon

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Improved performance of sub-10-nm band-to-band tunneling n-i-n graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2021.110312 ◽

2021 ◽

pp. 110312

Author(s):

Khalil Tamersit ◽

Zeinab Ramezani ◽

I.S. Amiri

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Band To Band Tunneling ◽

Improved Performance

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Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418485 ◽

2008 ◽

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Double Gate ◽

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Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.11.007 ◽

2013 ◽

Vol 16 (5) ◽

pp. 1240-1247 ◽

Author(s):

Zahra Arefinia

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Silicon On Insulator ◽

Double Gate ◽

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Impact of temperature on the performance of sub-35nm symmetric Double Gate Junctionless Transistor based inverter using High-K gate dielectric, a TCAD simulation study

2016 IEEE 1st International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES) ◽

10.1109/icpeices.2016.7853735 ◽

2016 ◽

Author(s):

Uttam Ch. Boro ◽

Nipanka Bora ◽

Pankaj Appun Pegu ◽

Rupaban Subadar

Keyword(s):

Simulation Study ◽

Gate Dielectric ◽

Double Gate ◽

High K ◽

Junctionless Transistor ◽

Tcad Simulation ◽

High K Gate Dielectric

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Significant improvement of infrared graphene nanoribbon phototransistor performance: A quantum simulation study

Sensors and Actuators A Physical ◽

10.1016/j.sna.2020.112446 ◽

2021 ◽

Vol 317 ◽

pp. 112446

Author(s):

M.A. Abdi ◽

H. Bencherif ◽

T. Bendib ◽

F. Meddour ◽

M. Chahdi

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Graphene Nanoribbon

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The impact of high-k gate dielectric on Junctionless Vertical Double Gate MOSFET

International Journal of Computer Sciences and Engineering ◽

10.26438/ijcse/v6i6.14751478 ◽

2018 ◽

Vol 6 (6) ◽

pp. 1475-1478

Author(s):

Jagdeep Rahul

Keyword(s):

Gate Dielectric ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

High K Gate Dielectric

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Semiconductor-Thickness-Dependent Design of Hetero-Gate Dielectric in Double-Gate TFETs

2020 IEEE Eighth International Conference on Communications and Electronics (ICCE) ◽

10.1109/icce48956.2021.9352038 ◽

2021 ◽

Author(s):

Nguyen Dang Chien ◽

Nguyen Van Hao ◽

Le Van Tung ◽

Chun-Hsing Shih

Keyword(s):

Gate Dielectric ◽

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