Diffuse reflectance spectroscopy: An effective tool to probe the defect states in wide band gap semiconducting materials

2018 ◽  
Vol 86 ◽  
pp. 151-156 ◽  
Author(s):  
Vikash Mishra ◽  
M. Kamal Warshi ◽  
Aanchal Sati ◽  
Anil Kumar ◽  
Vinayak Mishra ◽  
...  
Keyword(s):  
Band Gap ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Wide Band ◽  
Reflectance Spectroscopy ◽  
Semiconducting Materials ◽  
Defect States ◽  
Wide Band Gap

Differentiation between nerve and adipose tissue using wide-band (350-1,830 nm) in vivo diffuse reflectance spectroscopy

2014 ◽  
Vol 46 (7) ◽  
pp. 538-545 ◽  
Author(s):  
Rutger M. Schols ◽  
Mark ter Laan ◽  
Laurents P.S. Stassen ◽  
Nicole D. Bouvy ◽  
Arjen Amelink ◽  
...  
Keyword(s):  
Adipose Tissue ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Wide Band ◽  
Reflectance Spectroscopy

scholarly journals Automated method for the determination of the band gap energy of pure and mixed powder samples using diffuse reflectance spectroscopy

Heliyon ◽  
2019 ◽  
Vol 5 (4) ◽  
pp. e01505 ◽  
Author(s):  
A. Escobedo-Morales ◽  
I.I. Ruiz-López ◽  
M.deL. Ruiz-Peralta ◽  
L. Tepech-Carrillo ◽  
M. Sánchez-Cantú ◽  
...  
Keyword(s):  
Band Gap ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Reflectance Spectroscopy ◽  
Band Gap Energy ◽  
Mixed Powder ◽  
Gap Energy ◽  
Automated Method ◽  
Powder Samples

Determination of energy band gap of nanocrystalline SbSI using diffuse reflectance spectroscopy

2009 ◽  
Vol 80 (4) ◽  
pp. 046107 ◽  
Author(s):  
M. Nowak ◽  
B. Kauch ◽  
P. Szperlich
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Reflectance Spectroscopy ◽  
Energy Band Gap

scholarly journals Novel, Microwave Assisted Route of Synthesis of Binary Oxide Semiconducting Phases – PbMoO4 And PbWo4 / Nowa Metoda Syntezy Binarnych Faz Tlenkowych O Charakterze Półprzewodnikowym W Polu Mikrofalowym – PbMoO4 I PbWo4

2013 ◽  
Vol 58 (1) ◽  
pp. 217-222 ◽  
Author(s):  
P. Kwolek ◽  
T. Tokarski ◽  
T. Łokcik ◽  
K. Szaciłowski
Keyword(s):  
Band Gap ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Hydrothermal Process ◽  
Reflectance Spectroscopy ◽  
Lead Tungstate ◽  
Microwave Assisted ◽  
A Value ◽  
Lead Molybdate ◽  
Structure Morphology

Highly crystalline powders of lead molybdate and tungstate were synthesized by a microwave assisted hydrothermal process in a microwave heated high pressure autoclave. Application of this novel and environmentally friendly technique in the synthesis of these compounds has never been reported before. The influence of a time of synthesis on a crystal structure, morphology and a value of a band gap for both PbMoO4 and PbWO4 was examined. The value of the band gap was determined using diffuse reflectance spectroscopy. For lead molybdate the medium value of the band gap equals to ca. 3.2 eV whereas for lead tungstate it oscillates around 4 eV and does not depend on the duration time of the synthesis.

Characterization of defects and impurities in wide band gap semiconductors by cathodoluminescence in TEM

1991 ◽  
Vol 49 ◽  
pp. 836-837
Author(s):  
R.J. Graham
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Optically Active ◽  
Semiconducting Materials ◽  
Electronic Information ◽  
Wide Band Gap ◽  
Low Concentrations ◽  
Wide Band Gap Semiconductors ◽  
Gan On Si

As a characterization technique for semiconductors, cathodoluminescence (CL) performed in TEM has several useful advantages over the more common SEM-based technique, the most important being that the acquisition of CL data from localized regions in an electron transparent specimen allows a correlation of microstructural and optical/electronic information. For example, it is possible to determine the distribution of low concentrations of optically active impurities and their possible association with defects, often at submicron resolution. Examples of TEM CL as a method of characterizing defects in semiconducting materials presented here are taken from wide band gap materials which are of current interest including CVD-grown diamond films and β-GaN on Si.

Effect of proton uptake on the structure of energy levels in the band-gap of Sr-doped LaScO3: diffuse reflectance spectroscopy and coherent potential approximation calculations

2019 ◽  
Vol 21 (15) ◽  
pp. 7989-7995 ◽  
Author(s):  
Maxim I. Vlasov ◽  
Veronika M. Zainullina ◽  
Michael A. Korotin ◽  
Andrei S. Farlenkov ◽  
Maxim V. Ananyev
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Energy Levels ◽  
Reflectance Spectroscopy ◽  
Coherent Potential Approximation ◽  
Acceptor Doping ◽  
Potential Approximation ◽  
Proton Uptake

The obtained results explain features of LaScO3 optical properties and the effect of acceptor doping and H2 and H2O uptake on them.

Deep Defect States in Wide-Band-Gap ABX3 Halide Perovskites

2019 ◽  
Vol 4 (5) ◽  
pp. 1150-1157 ◽  
Author(s):  
Igal Levine ◽  
Omar Garcia Vera ◽  
Michael Kulbak ◽  
Davide-Raffaele Ceratti ◽  
Carolin Rehermann ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Defect States ◽  
Wide Band Gap ◽  
Deep Defect ◽  
Halide Perovskites

scholarly journals Wide band gap design of new chalcogenide compounds: KSrPS4 and CsBaAsS4

RSC Advances ◽  
2017 ◽  
Vol 7 (60) ◽  
pp. 38044-38051 ◽  
Author(s):  
Jianqiao Jiang ◽  
Dajiang Mei ◽  
Pifu Gong ◽  
Zheshuai Lin ◽  
Junbo Zhong ◽  
...  
Keyword(s):  
Band Gap ◽  
Diffuse Reflectance ◽  
Wide Band ◽  
Band Gaps ◽  
Wide Band Gap ◽  
Reflectance Measurements

KSrPS4 and CsBaAsS4 were successfully synthesized. The results of diffuse reflectance measurements revealed that KSrPS4 and CsBaAsS4 possess wide band gaps, which are larger than 3.62 eV and 2.86 eV, respectively.

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