Heat transport properties of alumina gate insulator films on Ge substrates fabricated by atomic layer deposition

2021 ◽  
Vol 121 ◽  
pp. 105396
Author(s):  
Noriyuki Uchida ◽  
Yuta Nakajima ◽  
Leonid Bolotov ◽  
Wen-Hsin Chang ◽  
Tatsuro Maeda ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Transport Properties ◽  
Heat Transport ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
Heat Transport Properties

HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

2007 ◽  
Vol 515 (12) ◽  
pp. 5109-5112 ◽  
Author(s):  
S.-W. Jeong ◽  
H.J. Lee ◽  
K.S. Kim ◽  
M.T. You ◽  
Y. Roh ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition

Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

2009 ◽  
Vol 94 (14) ◽  
pp. 142107 ◽  
Author(s):  
J. B. Kim ◽  
C. Fuentes-Hernandez ◽  
W. J. Potscavage ◽  
X.-H. Zhang ◽  
B. Kippelen
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 685-688 ◽  
Author(s):  
Emanuela Schilirò ◽  
Salvatore di Franco ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Hassan Gargouri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Thermally Grown

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films, both with and without the presence of a thin SiO2 layer, thermally grown on the 4H-SiC before ALD. Capacitance-voltage measurements on MOS structures resulted in a higher dielectric constant (ε~8.4) for the Al2O3/SiO2/SiC stack, with respect to that of the Al2O3/SiC sample (ε~ 6.7). Moreover, C<em>urrent density-Electric Field</em> measurements demonstrated a reduction of the leakage current and an improvement of the breakdown behaviour in the presence of the interfacial thermally grown SiO2. Basing on these preliminary results, possible applications of ALD-Al2O3 as gate insulator in 4H-SiC MOSFETs can be envisaged.

Nanoscale surface engineering of a high-k ZrO2/SiO2 gate insulator for a high performance ITZO TFT via plasma-enhanced atomic layer deposition

2020 ◽  
Vol 8 (38) ◽  
pp. 13342-13348
Author(s):  
Wan-Ho Choi ◽  
Woojin Jeon ◽  
Jin-Seong Park
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Surface Engineering ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
High K

Study of the correlation between mobility (μeff) and dielectric constant (k) in a PEALD high-k SiO2/ZrO2 gate insulator structure via nanoscale engineering.

Layered deposition of SnS2 grown by atomic layer deposition and its transport properties

2019 ◽  
Vol 30 (40) ◽  
pp. 405707 ◽  
Author(s):  
Namgue Lee ◽  
Gunwoo Lee ◽  
Hyeongsu Choi ◽  
Hyunwoo Park ◽  
Yeonsik Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Transport Properties ◽  
Atomic Layer ◽  
Layer Deposition
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