Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

2022 ◽  
Vol 142 ◽  
pp. 106464
Author(s):  
Kağan Murat Pürlü ◽  
Merve Nur Koçak ◽  
Gamze Yolcu ◽  
İzel Perkitel ◽  
İsmail Altuntaş ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Si Doped

Characterization and Elimination of Forward Snapback Defects in GaAs Light Emitting Diodes

1996 ◽  
Author(s):  
J. Zimmer ◽  
D. Nielsen ◽  
T.A. Anderson ◽  
M. Schade ◽  
N. Saha ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting Diode ◽  
Elevated Concentration ◽  
Forward Voltage ◽  
Light Emitting ◽  
Intermittent Yield ◽  
Si Doped ◽  
Secondary Ion ◽  
Furnace Pressure

Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~1018/cm3) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward voltage (Vf) parameters have been correlated to abnormalities in the junction formation. Scanning electron (SEM) and optical microscopy of cleaved and stained samples revealed a continuous layer of material approximately 2.5 to 3.0 urn thick at the n-epi/substrate interface. Characterization of a defective wafer via secondary ion mass spectroscopy (SIMS) revealed an elevated concentration of O throughout the region containing the defect. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) data taken from a wafer prior to growth of the epi layers did not reveal any unusual oxidation or contamination. Extensive review of the processing data suggested LPE furnace pressure was the obvious source of variability. Processing wafers through the LPE furnace with a slight positive H2 gas pressure has greatly reduced the occurrence of this defect.

In-SituContactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1626-1630 ◽  
Author(s):  
Tamotsu Hashizume ◽  
Yasuhiko Ishikawa ◽  
Toshiyuki Yoshida ◽  
Hideki Hasegawa
Keyword(s):  
Macroscopic Properties ◽  
Si Doped

Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate

2013 ◽  
Vol 50 (6) ◽  
pp. 551-556
Author(s):  
Eun-Hee Jeong ◽  
Jun-Ki Chung ◽  
Rae-Young Jung ◽  
Sung-Jin Kim ◽  
Sang-Yeup Park
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition

Growth and characterization of Si-doped diamond single crystals grown by the HTHP method

1996 ◽  
Vol 5 (6-8) ◽  
pp. 866-869 ◽  
Author(s):  
G. Sittas ◽  
H. Kanda ◽  
I. Kiflawi ◽  
P.M. Spear
Keyword(s):  
Single Crystals ◽  
Diamond Single Crystals ◽  
Si Doped

Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6443-6447 ◽  
Author(s):  
Peter Hacke ◽  
Atsuyoshi Maekawa ◽  
Norikatsu Koide ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organic Vapor ◽  
Metal Organic ◽  
Si Doped
Sign in / Sign up

Export Citation Format

Share Document