Graphene oxide for nonvolatile memory application by using electrophoretic technique

Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO) sandwiched structure can be tuned in a controllable manner. An investigation was made on the memristic performance mechanism regarding GO charge-trap memory; these blends were further characterized by transmission electron microscope (TEM), scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR), Raman spectra, thermogravimetric analysis, X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and fluorescence spectra in particular. Dependent on the GO content, the resistive switching was originated from the charges trapped in GO, for which bipolar tunable memristic behaviors were observed. PMMA:GO composites possess an ideal capability for large area device applications with the benefits of superior electronic properties and easy chemical modification.

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Wavelength dependent light tunable resistive switching graphene oxide nonvolatile memory devices

Carbon ◽

10.1016/j.carbon.2019.07.007 ◽

2019 ◽

Vol 153 ◽

pp. 81-88 ◽

Cited By ~ 5

Author(s):

Ayoub H. Jaafar ◽

N.T. Kemp

Keyword(s):

Graphene Oxide ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices

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Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

Applied Physics Letters ◽

10.1063/1.3690670 ◽

2012 ◽

Vol 100 (9) ◽

pp. 093106 ◽

Cited By ~ 8

Author(s):

David J. Baek ◽

Myeong-Lok Seol ◽

Sung-Jin Choi ◽

Dong-Il Moon ◽

Yang-Kyu Choi

Keyword(s):

Graphene Oxide ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Storage ◽

Storage Node ◽

A Charge

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Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors

Nanomaterials ◽

10.3390/nano10081448 ◽

2020 ◽

Vol 10 (8) ◽

pp. 1448

Author(s):

Lei Li

Keyword(s):

Graphene Oxide ◽

Data Storage ◽

Indium Tin Oxide ◽

Nonvolatile Memory ◽

Conduction Mechanism ◽

Graphene Quantum Dots ◽

Charge Trapping ◽

Reset Voltage ◽

Ultrahigh Density ◽

A Charge

Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping GQDs as charge-trapping centers, the device indium-tin oxide (ITO)/GO:0.5 wt%GQDs/Ni revealed controllable memristic switching behaviors that were tunable from binary to ternary, and remarkably enhanced in contrast with ITO/GO/Ni. It was found that the device has an excellent performance in memristic switching parameters, with a SET1, SET2 and RESET voltage of −0.9 V, −1.7 V and 5.15 V, as well as a high ON2/ON1/OFF current ratio (103:102:1), and a long retention time (104 s) together with 100 successive cycles. The conduction mechanism of the binary and ternary GO-based memory cells was discussed in terms of experimental data employing a charge trapping-detrapping mechanism. The reinforcement effect of GQDs on the memristic switching of GO through cycle-to-cycle operation has been extensively investigated, offering great potential application for multi-bit data storage in ultrahigh-density, nonvolatile memory.

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