Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors

Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping GQDs as charge-trapping centers, the device indium-tin oxide (ITO)/GO:0.5 wt%GQDs/Ni revealed controllable memristic switching behaviors that were tunable from binary to ternary, and remarkably enhanced in contrast with ITO/GO/Ni. It was found that the device has an excellent performance in memristic switching parameters, with a SET1, SET2 and RESET voltage of −0.9 V, −1.7 V and 5.15 V, as well as a high ON2/ON1/OFF current ratio (103:102:1), and a long retention time (104 s) together with 100 successive cycles. The conduction mechanism of the binary and ternary GO-based memory cells was discussed in terms of experimental data employing a charge trapping-detrapping mechanism. The reinforcement effect of GQDs on the memristic switching of GO through cycle-to-cycle operation has been extensively investigated, offering great potential application for multi-bit data storage in ultrahigh-density, nonvolatile memory.

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Biomemristic Behavior for Water-Soluble Chitosan Blended with Graphene Quantum Dot Nanocomposite

Nanomaterials ◽

10.3390/nano10030559 ◽

2020 ◽

Vol 10 (3) ◽

pp. 559

Author(s):

Lei Li

Keyword(s):

Data Storage ◽

Indium Tin Oxide ◽

High Performance ◽

Graphene Quantum Dots ◽

Charge Trapping ◽

Water Soluble ◽

Chemical Components ◽

Spin Casting ◽

Acidic Salt ◽

Natural Biomaterial

Bionanocomposite has promising biomemristic behaviors for data storage inspired by a natural biomaterial matrix. Carboxylated chitosan (CCS), a water-soluble derivative of chitosan avoiding the acidic salt removal, has better biodegradability and bioactivity, and is able to absorb graphene quantum dots (GQDs) employed as charge-trapping centers. In this investigation, biomemristic devices based on water-soluble CCS:GQDs nanocomposites were successfully achieved with the aid of the spin-casting method. The promotion of binary biomemristic behaviors for Ni/CCS:GQDs/indium-tin-oxide (ITO) was evaluated for distinct weight ratios of the chemical components. Fourier transform infrared spectroscopy, Raman spectroscopy (temperature dependence), thermogravimetric analyses and scanning electron microscopy were performed to assess the nature of the CCS:GQDs nanocomposites. The fitting curves on the experimental data further confirmed that the conduction mechanism might be attributed to charge trapping–detrapping in the CCS:GQDs nanocomposite film. Advances in water-soluble CCS-based electronic devices would open new avenues in the biocompatibility and integration of high-performance biointegrated electronics.

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Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device

Polymers ◽

10.3390/polym10080901 ◽

2018 ◽

Vol 10 (8) ◽

pp. 901 ◽

Cited By ~ 11

Author(s):

Ju-Young Choi ◽

Hwan-Chul Yu ◽

Jeongjun Lee ◽

Jihyun Jeon ◽

Jaehyuk Im ◽

...

Keyword(s):

Graphene Oxide ◽

Indium Tin Oxide ◽

Nonvolatile Memory ◽

In Situ Polymerization ◽

Random Access ◽

Charge Trapping ◽

Memory Device ◽

Resistive Random Access Memory ◽

Current Ratio ◽

Functionalized Graphene Oxide

2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (Ion/Ioff = 3.41 × 108). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.

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Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface

Micromachines ◽

10.3390/mi11060580 ◽

2020 ◽

Vol 11 (6) ◽

pp. 580 ◽

Cited By ~ 1

Author(s):

Lei Li ◽

Guangming Li

Keyword(s):

Graphene Oxide ◽

Indium Tin Oxide ◽

Electronic Devices ◽

Environmentally Benign ◽

Current Ratio ◽

Environment Friendly ◽

Reset Voltage ◽

Wrinkled Surface ◽

Resistance State ◽

Memory Applications

Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices.

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Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory

Micromachines ◽

10.3390/mi10020151 ◽

2019 ◽

Vol 10 (2) ◽

pp. 151 ◽

Cited By ~ 3

Author(s):

Lei Li

Keyword(s):

Graphene Oxide ◽

Electron Microscope ◽

Indium Tin Oxide ◽

Nonvolatile Memory ◽

Nanocomposite Films ◽

Large Area ◽

Charge Trap ◽

Nonvolatile Memory Devices ◽

Device Applications ◽

Sandwiched Structure

Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO) sandwiched structure can be tuned in a controllable manner. An investigation was made on the memristic performance mechanism regarding GO charge-trap memory; these blends were further characterized by transmission electron microscope (TEM), scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR), Raman spectra, thermogravimetric analysis, X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and fluorescence spectra in particular. Dependent on the GO content, the resistive switching was originated from the charges trapped in GO, for which bipolar tunable memristic behaviors were observed. PMMA:GO composites possess an ideal capability for large area device applications with the benefits of superior electronic properties and easy chemical modification.

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Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

Applied Physics Letters ◽

10.1063/1.3690670 ◽

2012 ◽

Vol 100 (9) ◽

pp. 093106 ◽

Cited By ~ 8

Author(s):

David J. Baek ◽

Myeong-Lok Seol ◽

Sung-Jin Choi ◽

Dong-Il Moon ◽

Yang-Kyu Choi

Keyword(s):

Graphene Oxide ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Storage ◽

Storage Node ◽

A Charge

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Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2012.2236350 ◽

2013 ◽

Vol 12 (2) ◽

pp. 157-162 ◽

Cited By ~ 4

Author(s):

X. D. Huang ◽

Johnny K. O. Sin ◽

P. T. Lai

Keyword(s):

Nonvolatile Memory ◽

Charge Trapping ◽

A Charge ◽

Memory Applications

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The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

Journal of Nanomaterials ◽

10.1155/2021/5565169 ◽

2021 ◽

Vol 2021 ◽

pp. 1-7

Author(s):

Hau Huu Do Ho ◽

Trung Minh Le ◽

Ngoc Kim Pham

Keyword(s):

Graphene Oxide ◽

Electric Fields ◽

Nonvolatile Memory ◽

Conduction Mechanism ◽

Random Access ◽

Memory Device ◽

Resistive Random Access Memory ◽

Switching Behavior ◽

Bipolar Switching ◽

Metal Insulator Metal

Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest recently because of their advantageous properties. The combination of chitosan (CS) and graphene oxide (GO) acts as switching layers in the Al/CS-GO/FTO RRAM structure it is studied with bipolar switching behavior at approximately 102 ON/OFF ratios during 100 cycles. This hybrid interaction is identified by shifts in the D, G, and 2D bands using Raman spectroscopy. The conduction mechanism is proposed to be a space-charge-limited conduction (SCLC) mechanism and trap-assisted tunneling conduction mechanism in the ON and OFF states, respectively. The trapped and detrapped electrons move through the trap sites with external electric fields, and this movement is responsible for the switching mechanism of the CS-GO nanocomposite memory device.

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