Vacuum processed large area doped thin-film crystals: A new approach for high-performance organic electronics

2021 ◽  
Vol 17 ◽  
pp. 100352
Author(s):  
S.-J. Wang ◽  
M. Sawatzki ◽  
H. Kleemann ◽  
I. Lashkov ◽  
D. Wolf ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
High Performance ◽  
Large Area ◽  
New Approach

scholarly journals Engineering crystalline quasi-two-dimensional polyaniline thin film with enhanced electrical and chemiresistive sensing performances

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Tao Zhang ◽  
Haoyuan Qi ◽  
Zhongquan Liao ◽  
Yehu David Horev ◽  
Luis Antonio Panes-Ruiz ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
High Performance ◽  
Two Dimensional ◽  
Large Area ◽  
Molecular Ordering ◽  
Air Water Interface ◽  
Volatile Organic ◽  
Chemiresistive Sensing ◽  
Aniline Oligomers

Abstract Engineering conducting polymer thin films with morphological homogeneity and long-range molecular ordering is intriguing to achieve high-performance organic electronics. Polyaniline (PANI) has attracted considerable interest due to its appealing electrical conductivity and diverse chemistry. However, the synthesis of large-area PANI thin film and the control of its crystallinity and thickness remain challenging because of the complex intermolecular interactions of aniline oligomers. Here we report a facile route combining air-water interface and surfactant monolayer as templates to synthesize crystalline quasi-two-dimensional (q2D) PANI with lateral size ~50 cm2 and tunable thickness (2.6–30 nm). The achieved q2D PANI exhibits anisotropic charge transport and a lateral conductivity up to 160 S cm−1 doped by hydrogen chloride (HCl). Moreover, the q2D PANI displays superior chemiresistive sensing toward ammonia (30 ppb), and volatile organic compounds (10 ppm). Our work highlights the q2D PANI as promising electroactive materials for thin-film organic electronics.

Organic Electronics

2020 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Devices ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Graduate Studies ◽  
Organic Light

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.

Large-area and highly uniform carbon nanotube film for high-performance thin film transistors

Nano Research ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 4356-4367 ◽  
Author(s):  
Guodong Dong ◽  
Jie Zhao ◽  
Lijun Shen ◽  
Jiye Xia ◽  
Hu Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
High Performance ◽  
Large Area ◽  
Carbon Nanotube Film ◽  
Highly Uniform

Contact-Induced Nucleation in High-Performance Bottom-Contact Organic Thin Film Transistors Manufactured by Large-Area Compatible Solution Processing

2015 ◽  
Vol 26 (14) ◽  
pp. 2371-2378 ◽  
Author(s):  
Muhammad R. Niazi ◽  
Ruipeng Li ◽  
Maged Abdelsamie ◽  
Kui Zhao ◽  
Dalaver H. Anjum ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Solution Processing ◽  
Organic Thin Film ◽  
Large Area ◽  
Bottom Contact

Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

2001 ◽  
Vol 685 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
R. T. Fulks ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Noise Performance ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
Flat Panel Imagers ◽  
Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

Large-Area, Selective Transfer of Microstructured Silicon: A Printing- Based Approach to High-Performance Thin-Film Transistors Supported on Flexible Substrates

2005 ◽  
Vol 17 (19) ◽  
pp. 2332-2336 ◽  
Author(s):  
K. J. Lee ◽  
M. J. Motala ◽  
M. A. Meitl ◽  
W. R. Childs ◽  
E. Menard ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Flexible Substrates ◽  
Selective Transfer ◽  
Large Area

scholarly journals Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1016
Author(s):  
Silvestre Salas-Rodríguez ◽  
Francisco López-Huerta ◽  
Agustín L. Herrera-May ◽  
Joel Molina-Reyes ◽  
Jaime Martínez-Castillo
Keyword(s):  
Thin Film ◽  
Numerical Simulations ◽  
Density Of States ◽  
Thin Film Transistors ◽  
High Performance ◽  
Current Model ◽  
Drain Current ◽  
Absolute Error ◽  
Threshold Region ◽  
Large Area

Thin film transistors (TFTs) fabricated on flexible and large area substrates have been studied with great interest due to their future applications. Recent studies have developed new semiconductors such as a-SiGe:H for fabrication of high performance TFTs. These films have important advantages, including deposition at low temperatures and low pressures, and higher carrier mobilities. Due to these advantages, the a-SiGe:H films can be used in the fabrication of TFTs. In this work, we present an analytical drain current model for a-SiGe:H TFTs considering density of states and free charges, which describes the current behavior at sub-and above- threshold region. In addition, 2D numerical simulations of a-SiGe:H TFTs are developed. The results of the analytical drain current model agree well with those of the 2D numerical simulations. For all characteristics of the drain current curves, the average absolute error of the analytical model is close to 5.3%. This analytical drain current model can be useful to estimate the performance of a-SiGe:H TFTs for applications in large area electronics.

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