Large-Area, Selective Transfer of Microstructured Silicon: A Printing- Based Approach to High-Performance Thin-Film Transistors Supported on Flexible Substrates

Thin film transistors (TFTs) fabricated on flexible and large area substrates have been studied with great interest due to their future applications. Recent studies have developed new semiconductors such as a-SiGe:H for fabrication of high performance TFTs. These films have important advantages, including deposition at low temperatures and low pressures, and higher carrier mobilities. Due to these advantages, the a-SiGe:H films can be used in the fabrication of TFTs. In this work, we present an analytical drain current model for a-SiGe:H TFTs considering density of states and free charges, which describes the current behavior at sub-and above- threshold region. In addition, 2D numerical simulations of a-SiGe:H TFTs are developed. The results of the analytical drain current model agree well with those of the 2D numerical simulations. For all characteristics of the drain current curves, the average absolute error of the analytical model is close to 5.3%. This analytical drain current model can be useful to estimate the performance of a-SiGe:H TFTs for applications in large area electronics.

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HIGH MOBILITY CONJUGATED POLYMER SEMICONDUCTORS FOR ORGANIC THIN FILM TRANSISTORS

COSMOS ◽

10.1142/s0219607709000427 ◽

2009 ◽

Vol 05 (01) ◽

pp. 59-77

Author(s):

YUNING LI ◽

BENG S. ONG

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

High Mobility ◽

Cost Effective ◽

Charge Carrier Mobility ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Large Area ◽

Polymer Semiconductors

Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.

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Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays

MRS Bulletin ◽

10.1557/mrs2006.118 ◽

2006 ◽

Vol 31 (6) ◽

pp. 455-459 ◽

Cited By ~ 35

Author(s):

Sangyun Lee ◽

Bonwon Koo ◽

Jae-Geun Park ◽

Hyunsik Moon ◽

Jungseok Hahn ◽

...

Keyword(s):

Thin Film ◽

Organic Semiconductors ◽

Thin Film Transistors ◽

High Performance ◽

Dielectric Materials ◽

Organic Thin Film Transistors ◽

Processing Temperature ◽

Organic Thin Film ◽

Large Area ◽

Active Matrix

AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.

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