The development of a fast imaging electron detector based on the CODACON concept

The most well known application of the scanning microscope to the crystals is known as Coates pattern. The contrast of this image depends on the variation of the incident angle of the beam to the crystal surface. The defect in the crystal surface causes to make contrast in normal scanning image with constant incident angle. The intensity variation of the backscattered electrons in the scanning microscopy was calculated for the defect in the crystals by Clarke and Howie. Clarke also observed the defect using a scanning microscope.This paper reports the observation of lattice defects appears in thin crystals through backscattered, secondary and transmitted electron image. As a backscattered electron detector, a p-n junction detector of 0.9 π solid angle has been prepared for JSM-50A. The gain of the detector itself is 1.2 x 104 at 50 kV and the gain of additional AC amplifier using band width 100 Hz ∼ 10 kHz is 106.

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Ultra-high resolution SEMI-in-lens type FE-SEM, JSM-6320F, with strong magnetic-field lens with built-in secondary-electron detector

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170153 ◽

1994 ◽

Vol 52 ◽

pp. 484-485

Author(s):

T. Miyokawa ◽

H. Kazumori ◽

S. Nakagawa ◽

C. Nielsen

Keyword(s):

High Resolution ◽

Secondary Electron ◽

Spherical Aberration ◽

Incident Beam ◽

Chromatic Aberration ◽

Magnetic Flux Density ◽

Objective Lens ◽

Electron Detector ◽

High Resolution Images ◽

Working Distance

We have developed a strongly excited objective lens with a built-in secondary electron detector to provide ultra-high resolution images with high quality at low to medium accelerating voltages. The JSM-6320F is a scanning electron microscope (FE-SEM) equipped with this lens and an incident beam divergence angle control lens (ACL).The objective lens is so strongly excited as to have peak axial Magnetic flux density near the specimen surface (Fig. 1). Since the speciien is located below the objective lens, a large speciien can be accomodated. The working distance (WD) with respect to the accelerating voltage is limited due to the magnetic saturation of the lens (Fig.2). The aberrations of this lens are much smaller than those of a conventional one. The spherical aberration coefficient (Cs) is approximately 1/20 and the chromatic aberration coefficient (Cc) is 1/10. for accelerating voltages below 5kV. At the medium range of accelerating voltages (5∼15kV). Cs is 1/10 and Cc is 1/7. Typical values are Cs-1.lmm. Cc=l. 5mm at WD=2mm. and Cs=3.lmm. Cc=2.9 mm at WD=5mm. This makes the lens ideal for taking ultra-high resolution images at low to medium accelerating voltages.

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Withdrawal: Radiation and Signal Analysis of the Falcon Solid-state Energetic Electron Detector (FalconSEED)

2018 AIAA Aerospace Sciences Meeting ◽

10.2514/6.2018-0934.c1 ◽

2018 ◽

Author(s):

Carlos A. Maldonado

Keyword(s):

Solid State ◽

Signal Analysis ◽

Energetic Electron ◽

Electron Detector

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Novel Approach of Improving Secondary Electron Detector in FIB System

10.31399/asm.cp.istfa2018p0206 ◽

2018 ◽

Author(s):

Steve Wang ◽

Jim McGinn ◽

Peter Tvarozek ◽

Amir Weiss

Keyword(s):

Integrated Circuit ◽

Secondary Electron ◽

Focused Ion Beam ◽

Ion Beam ◽

Vital Role ◽

Electron Detector ◽

System A ◽

Novel Approach

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.

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