Corrigendum to “Thermal neutron measurements with an unpowered, miniature, solid-state device” [Nucl. Instrum. Methods Phys. Res. A 1012 (2021) 165577]

It has always been stated in electronics, semiconductor and solid state device textbooks that the hole drift and electron drift currents in the depletion region of a p–n junction are constant and independent of applied voltage (biasing). However, the explanations given are qualitative and unclear. We extrapolate the existing analytic theory of a p–n junction to give a quantitative explanation of why the currents are constant. We have also shown that the carrier concentrations in the depletion region, as depicted in some of the textbooks, are incorrect, and need to be revised. Our calculations further demonstrate that in reverse biasing, both hole and electron carrier concentrations each experience a local maximum and a local minimum, indicating that their diffusion currents change directions twice within the depletion region.

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"All-in-one" solid-state device based on a light-addressable potentiometric sensor platform

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. ◽

10.1109/sensor.2005.1497461 ◽

2005 ◽

Author(s):

T. Wagner ◽

T. Yoshinobu ◽

R. Otto ◽

M.J. Schoning

Keyword(s):

Solid State ◽

Potentiometric Sensor ◽

Sensor Platform ◽

State Device ◽

Solid State Device ◽

Light Addressable Potentiometric Sensor

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A high performance solid state asymmetric supercapacitor device based upon NiCo2O4nanosheets//MnO2microspheres

RSC Advances ◽

10.1039/c6ra15420d ◽

2016 ◽

Vol 6 (74) ◽

pp. 70292-70302 ◽

Cited By ~ 11

Author(s):

Syed Khalid ◽

Chuanbao Cao ◽

Lin Wang ◽

Youqi Zhu ◽

Yu Wu

Keyword(s):

Solid State ◽

Energy Density ◽

Power Density ◽

High Performance ◽

Asymmetric Supercapacitor ◽

State Device ◽

Solid State Device

The volumetric energy density and power density of a novel solid state device (NiCo2O4//MnO2) are much higher than most reported devices.

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A Solid State Pyranometer

Annals of West University of Timisoara - Physics ◽

10.1515/awutp-2015-0207 ◽

2015 ◽

Vol 58 (1) ◽

pp. 56-63

Author(s):

Anca Laura Dumitrescu ◽

Marius Paulescu ◽

Aurel Ercuta

Keyword(s):

Solid State ◽

Voltage Drop ◽

External Surface ◽

Incident Radiation ◽

Transfer Coefficients ◽

Heat Transfer Coefficients ◽

Analog Electronics ◽

Two Bodies ◽

State Device ◽

Solid State Device

Abstract The construction of a solid state device-based pyranometer designated to broadband irradiance measurements is presented in this paper. The device is built on the physical basis that the temperature difference between two bodies of identical shape and external surface area, identically exposed to the incident radiation, but having different absorption and heat transfer coefficients (e.g. one body is painted white and the other is painted black), is proportional to the incident irradiance. This proportionality may be put in evidence if the two bodies consisting of identical arrays of correspondingly painted semiconductor diodes, due to the thermal behaviour of their p-n junction. It is theoretically predicted and experimentally confirmed that the voltage drop across a diode passed through a constant forward current linearly decreases with the temperature of the junction. In other words, a signal proportional to the irradiance of the light source may be obtained via conventional analog electronics. The calibration of the apparatus, as performed by means of a professional device (LP PYRA 03), indicates a good linearity.

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