solid-state device

2011 ◽  
Keyword(s):  
Solid State ◽  
State Device ◽  
Solid State Device

Carrier Concentrations and Drift Currents in the Depletion Region of a p–n Junction

2003 ◽  
Vol 10 (04) ◽  
pp. 649-660
Author(s):  
D. K. Mak
Keyword(s):  
Solid State ◽  
Applied Voltage ◽  
Local Minimum ◽  
Local Maximum ◽  
Depletion Region ◽  
Electron Drift ◽  
Electron Carrier ◽  
Quantitative Explanation ◽  
State Device ◽  
Solid State Device

It has always been stated in electronics, semiconductor and solid state device textbooks that the hole drift and electron drift currents in the depletion region of a p–n junction are constant and independent of applied voltage (biasing). However, the explanations given are qualitative and unclear. We extrapolate the existing analytic theory of a p–n junction to give a quantitative explanation of why the currents are constant. We have also shown that the carrier concentrations in the depletion region, as depicted in some of the textbooks, are incorrect, and need to be revised. Our calculations further demonstrate that in reverse biasing, both hole and electron carrier concentrations each experience a local maximum and a local minimum, indicating that their diffusion currents change directions twice within the depletion region.

A high performance solid state asymmetric supercapacitor device based upon NiCo2O4nanosheets//MnO2microspheres

RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 70292-70302 ◽  
Author(s):  
Syed Khalid ◽  
Chuanbao Cao ◽  
Lin Wang ◽  
Youqi Zhu ◽  
Yu Wu
Keyword(s):  
Solid State ◽  
Energy Density ◽  
Power Density ◽  
High Performance ◽  
Asymmetric Supercapacitor ◽  
State Device ◽  
Solid State Device

The volumetric energy density and power density of a novel solid state device (NiCo2O4//MnO2) are much higher than most reported devices.

scholarly journals A Solid State Pyranometer

2015 ◽  
Vol 58 (1) ◽  
pp. 56-63
Author(s):  
Anca Laura Dumitrescu ◽  
Marius Paulescu ◽  
Aurel Ercuta
Keyword(s):  
Solid State ◽  
Voltage Drop ◽  
External Surface ◽  
Incident Radiation ◽  
Transfer Coefficients ◽  
Heat Transfer Coefficients ◽  
Analog Electronics ◽  
Two Bodies ◽  
State Device ◽  
Solid State Device

Abstract The construction of a solid state device-based pyranometer designated to broadband irradiance measurements is presented in this paper. The device is built on the physical basis that the temperature difference between two bodies of identical shape and external surface area, identically exposed to the incident radiation, but having different absorption and heat transfer coefficients (e.g. one body is painted white and the other is painted black), is proportional to the incident irradiance. This proportionality may be put in evidence if the two bodies consisting of identical arrays of correspondingly painted semiconductor diodes, due to the thermal behaviour of their p-n junction. It is theoretically predicted and experimentally confirmed that the voltage drop across a diode passed through a constant forward current linearly decreases with the temperature of the junction. In other words, a signal proportional to the irradiance of the light source may be obtained via conventional analog electronics. The calibration of the apparatus, as performed by means of a professional device (LP PYRA 03), indicates a good linearity.

Reversible Luminescence Modulation upon an Electric Field on a Full Solid-State Device Based on Lanthanide Dimers

2016 ◽  
Vol 8 (24) ◽  
pp. 15551-15556 ◽  
Author(s):  
Xiaohui Yi ◽  
Jie Shang ◽  
Liang Pan ◽  
Hongwei Tan ◽  
Bin Chen ◽  
...  
Keyword(s):  
Solid State ◽  
Electric Field ◽  
State Device ◽  
Solid State Device

Live spectroscopy to observe electrochromism in viologen based solid state device

2017 ◽  
Vol 261 ◽  
pp. 17-20 ◽  
Author(s):  
Suryakant Mishra ◽  
Haardik Pandey ◽  
Priyanka Yogi ◽  
Shailendra K. Saxena ◽  
Swarup Roy ◽  
...  
Keyword(s):  
Solid State ◽  
State Device ◽  
Solid State Device

Dye doped porous silica as an all solid state device for random lasing

2007 ◽  
Author(s):  
M. Berard ◽  
V. Rachet ◽  
K. Lahlil ◽  
T. Gacoin ◽  
J. P. Galaup ◽  
...  
Keyword(s):  
Solid State ◽  
Porous Silica ◽  
Random Lasing ◽  
State Device ◽  
Solid State Device
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